Integrated gate-protected HEMTs and mixed-signal functional blocks for GaN smart power ICs

Kwan, Man Ho

doi:10.14711/thesis-b1255232

Cited by 1 publication

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…High temperature operation of GaN analog and digital ICs have been reported up to 375°C to date [3,4]. The key advantages of SiC are its wide bandgap (3.2eV for 4H-SiC), and high critical electric field (2.2 MV/cm) [5] enabling operation at high temperature in applications including Venus exploration, oil and gas drilling, aviation, and automotive industries.…”

Section: Introductionmentioning

confidence: 99%

A Monolithic, 500 °C Operational Amplifier in 4H-SiC Bipolar Technology

Hedayati,

Lanni,

Rodriguez

et al. 2014

IEEE Electron Device Lett.

View full text Add to dashboard Cite

A Monolithic, 500 degrees C Operational Amplifier in 4H-SiC Bipolar Technology. © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting /republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. IEEE Electron Device Letters Permanent link to this version:http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-148621 > REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < 1Abstract-A monolithic bipolar operational amplifier (opamp) fabricated in 4H-SiC technology is presented. The opamp has been used in an inverting negative feedback amplifier configuration. Wide temperature operation of the amplifier is demonstrated from 25°C to 500°C. The measured closed loop gain is around 40 dB for all temperatures whereas the 3dB bandwidth increases from 270 kHz at 25°C to 410 kHz at 500°C. The opamp achieves 1.46 V/µs slew rate and 0.25% Total Harmonic Distortion (THD). This is the first report on high temperature operation of a fully integrated SiC bipolar opamp which demonstrates the feasibility of this technology for high temperature analog integrated circuits (ICs).

show abstract

Section: Introductionmentioning

confidence: 99%