Integrated Fin-line Components And Subsystems At 60 And 94 Ghz

Abstract

as a Member of Technical Staff on Advanced Component Developments for millimeter-wave applications. His main research interests are concerned with planar circuit techniques for mixers. filters, multiplier de: , signs, and computeraided techniques for design and manufacture.

Analysis of FIN Line Feasibility for W-Band Attenuator Applications

“…The shunt diode placement yields broad band performance, as shown in Fig. 22 [15]. Note that in both cases the insertion loss achieved in the respective non-attenuating states is approximately 2.0 dB.…”

“…For the series configuration, the Q that results from the parallel resonance in the forward bias mode severely limits the bandwidth, as seen in Fig. 21 [15]. The shunt diode placement yields broad band performance, as shown in Fig.…”

“…This choice is based upon the numerous references [14][15][16][17][18][19][20] that work with PIN diode at W-band frequencies for control applications. The parisitics resulting from FETs generally make them unsuitable for this frequency band.…”

“…For the shunt configuration, when the diode is reverse biased the shunt impedance is high and little attenuation occurs. By forward biasing the diode, this nearly shorts the transmission line, resulting in attenuation [ 15,18,191. The effect is different in each case.…”

“…The work of others [14][15][16][17][18][19][20][21] also indicates that a fin line is a promising transmission line structure for the development of an attenuator.…”