Integrated Circuit Technologies

Zeitzoff, P.; Hutchby, J.A.; Bersuker, G.; Huff, Howard R.

doi:10.1016/b978-044451494-3/50001-9

Cited by 8 publications

(2 citation statements)

References 55 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Recent advancements in semiconductor device technology have led to improved operational performance via physical scaling. [1,2] However, further performance enhancement has been limited by the need to maintain the power consumption per unit area at approximately 100 W cm −2 . To address this challenge, various ultra-low-power logic devices, such as gate-all-around fieldeffect transistors (GAAFETs), steep-switching FETs, and nearthreshold logic devices, have been extensively studied.…”

Section: Introductionmentioning

confidence: 99%

Pulsed I–V Analysis of Slow Domain Switching in Ferroelectric Hf_0.5Zr_0.5O₂ Using Graphene FETs

Hwang,

Kim,

Lee

2023

Adv Elect Materials

View full text Add to dashboard Cite

In this study, the domain switching mechanism of ferroelectric HZO thin films is investigated by analyzing the bulk charge of a graphene field‐effect transistor with an HZO dielectric device by using a pulsed IV measurement method. The domain switching speed, which is generally difficult to observe from a typical DC‐IV analysis of metal‐oxide‐semiconductor field‐effect transistors using a parameter analyzer, is investigated via the fast pulsed IV analysis method. Based on the measurements, most of the ferroelectric HZO domains are fast switched within 100 ns; however, domains that require a longer switching time in the order of 1 ms are also identified. Short pulses can be continuously applied to minimize the influence of other domains that are not switched by the switched domain. The feasibility of partial switching of the domains, which can be utilized for the multi‐functional operation of ferroelectric HZO devices, is observed. The results suggest that further investigation of the physical properties of slow‐switching domains is necessary to develop future synaptic array applications.

show abstract

Section: Introductionmentioning

confidence: 99%

Pulsed I–V Analysis of Slow Domain Switching in Ferroelectric Hf_0.5Zr_0.5O₂ Using Graphene FETs

Hwang,

Kim,

Lee

2023

Adv Elect Materials

View full text Add to dashboard Cite

show abstract

“…Miniaturization of Si-based complementary metal-oxide semiconductor (CMOS) devices is a continuous challenge in improving device performance, while sustaining the scaling requirements as defined by the Moore's law. 1,2 Due to physical complications, such as gate leakage, 1,3 parasitic resistance/capacitance 1,4 and size channel effects, 1,5,6 further downscaling of CMOS is impeded. Hence, the semiconductor industry is actively searching for potential candidates that can replace Si as the material of choice.…”

mentioning

confidence: 99%

Wet Chemical Processing of Ge in Acidic H₂O₂ Solution: Nanoscale Etching and Surface Chemistry

Abrenica

Fingerle

Лебедев

et al. 2020

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

Herein, we investigate wet-chemical etching of Ge (100) in acidic H2O2 solutions for technologically advanced device processing. Nanoscale etching kinetics data were provided by inductively coupled plasma mass spectrometry (ICP-MS) measurements. Rotation rate- dependent measurement showed that the hydrodynamics of the system is important. The dependence of the etch rate on the HCl concentration was considered for the range 0.001–1 M HCl. A stark difference morphologically for >1 M HCl, which resulted in a rough surface confirmed by atomic force microscopy (AFM) images, has been observed. X-ray photoelectron spectroscopy (XPS) measurements provided insight in the surface chemistry of etching for device processing. Electrochemical measurements confirmed that the etching process follows a chemical mechanism. Based on X-ray photoelectron spectroscopy (XPS) data, we present reaction schemes that help to understand the results.

show abstract

Non‐Ideal and Non‐Classical MOS Capacitors

Bhattacharyya

2009

Compact Mosfet Models for VLSI Design

View full text Add to dashboard Cite

Integrated Circuit Technologies

Cited by 8 publications

References 55 publications

Pulsed I–V Analysis of Slow Domain Switching in Ferroelectric Hf_0.5Zr_0.5O₂ Using Graphene FETs

Pulsed I–V Analysis of Slow Domain Switching in Ferroelectric Hf_0.5Zr_0.5O₂ Using Graphene FETs

Wet Chemical Processing of Ge in Acidic H₂O₂ Solution: Nanoscale Etching and Surface Chemistry

Non‐Ideal and Non‐Classical MOS Capacitors

Contact Info

Product

Resources

About

Integrated Circuit Technologies

Cited by 8 publications

References 55 publications

Pulsed I–V Analysis of Slow Domain Switching in Ferroelectric Hf0.5Zr0.5O2 Using Graphene FETs

Pulsed I–V Analysis of Slow Domain Switching in Ferroelectric Hf0.5Zr0.5O2 Using Graphene FETs

Wet Chemical Processing of Ge in Acidic H2O2 Solution: Nanoscale Etching and Surface Chemistry

Non‐Ideal and Non‐Classical MOS Capacitors

Contact Info

Product

Resources

About

Pulsed I–V Analysis of Slow Domain Switching in Ferroelectric Hf_0.5Zr_0.5O₂ Using Graphene FETs

Pulsed I–V Analysis of Slow Domain Switching in Ferroelectric Hf_0.5Zr_0.5O₂ Using Graphene FETs

Wet Chemical Processing of Ge in Acidic H₂O₂ Solution: Nanoscale Etching and Surface Chemistry