Integrated Circuit Compatible Surface Acoustic Wave Devices On Gallium Arsenide

Grudkowski, T.W.; Montress, G.K.; Gilden, M.; Black, John B.

doi:10.1109/tmtt.1981.1130564

Cited by 40 publications

(13 citation statements)

References 25 publications

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“…Specifics of SAW Fourier transform processors for interference rejection in spread-spectrum communications, adaptive filtering, real-time spectrum, and cepstrum analysis for radar and sonar are in [19], [49], and [50]. SAW and SBAW propagation in gallium arsenide are examined in [51] and [52].…”

Section: B Aim Of This Papermentioning

confidence: 99%

“…Berlinite (a-AIP0 4 ) single crystals have also been under investigation as an alternative to quartz in microwave acoustic applications [64], [65]. While a variety of crystal cuts exists for SAW propagation on gallium arsenide (GaAs) [39], [52], the listing in Table 4 is forthe (100)-cut with (110)-propagation, for maximum K2…”

Section: A Representative Sa W-filter Specificationsmentioning

confidence: 99%

“…As outlined in Fig. 10, PTFs have also been implemented on epitaxial CaAs using a (001 )-oriented substrate for maximu m piezoelectric cou pli ng to the su rface waves, and SAW propagation along a (110) direction [52], [194]. for CaAs is only 38 percent less.…”

Section: E Programmable Coding With Sa W Transversal Filtersmentioning

confidence: 99%

“…This provides milliwatt power dissipation per tap, with high input dynamic range, low spurious signal levels, and large tap on/off ratios. Also, this CaAs device can be configured for operation as a variable phase shifter, a tunable resonator, or for correlation of Barker or biphase codes [52], [194].…”

Section: E Programmable Coding With Sa W Transversal Filtersmentioning

confidence: 99%

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Applications of surface acoustic and shallow bulk acoustic wave devices

Campbell

1989

Proc. IEEE

111

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Applications of surface acoustic wave (SA W) and shallow bulk acoustic wave (SBA W) devices are reviewed. SA W-device coverage includes delay lines and filters operating at selected frequencies in the range from about 10 MHz to 11 GHz, modeling with singlecrystal piezoelectrics and layered structures, resonators and lowloss filters, comb filters and multiplexers, antenna duplexers, harmonic devices, chirp filters for pulse compression, coding with fixed and programmable transversal filters, Barker and quadraphase coding, adaptive filters, acoustic and acoustoelectric convolvers and correia tors for radar, spread spectrum, and packet radio, acoustooptic processors for Bragg modulation and spectrum analysis, real-time Fourier-transform, and cepstrum processors for radar and sonar, compressive receivers, Nyquist filters for microwave digital radio, clock-recovery filters for optical fiber communications, fixed-, tunable-, and multimode-oscillators, and frequency synthesizers, acoustic charge transport (ACT), and other SA W devices for signal processing on gallium arsenide, SA W sensors, and scanning acoustic microscopy. SBA W-devices applications include gigahertz delay lines, surface transverse wave resonators employing energy-trapping gratings, as well as oscillators with enhanced performance and capability.

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Section: B Aim Of This Papermentioning

confidence: 99%

Section: A Representative Sa W-filter Specificationsmentioning

confidence: 99%

Section: E Programmable Coding With Sa W Transversal Filtersmentioning

confidence: 99%

Section: E Programmable Coding With Sa W Transversal Filtersmentioning

confidence: 99%

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Applications of surface acoustic and shallow bulk acoustic wave devices

Campbell

1989

Proc. IEEE

111

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“…The physical properties of GaAs for SAW applications are similar to ST-quartz except for a Temperature Coefficient of Delay (TCD) of approximately -51 ppm/°C at room temperature (as compared to zero for ST-cut quartz). [2] The large temperature dependence of GaAs would easily mask the desired chemical response of the microsensor unless appropriate compensation, such. as used here, is employed.…”

Section: Introductionmentioning

confidence: 99%

Monolithic GaAs surface acoustic wave chemical microsensor array

Hietala

Casalnuovo

Heller

et al.

2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)

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A four-channel surface acoustic wave (SAW) chemical sensor array with associated RF electronics is monolithically integrated onto one GaAs IC. The sensor operates at 690 MHz from an on-chip SAW based oscillator and provides simple DC voltage outputs by using integrated phase detectors. This sensor array represents a significant advance in microsensor technology offering miniaturization, increased chemical selectivity, simplified system assembly, improved sensitivity, and inherent temperature compensation.

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