Integrated Bandpass Filter at 77 GHz in SiGe Technology

Dehlink, B.; Engl, M.; Aufinger, Klaus; Knapp, H.

doi:10.1109/lmwc.2007.895701

Cited by 50 publications

(18 citation statements)

References 7 publications

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“…On the other side, the standard CMOS process is regarded as a feasible manufacturing scheme since it has the property of easy integration, easy for large-scale manufacture, and low cost. Similar design scheme for BPF working on 60 GHz millimeter waveband by utilizing CMOS process has been proposed by previous researchers [1]- [3]. However, most of the designed BPF has various disadvantages, e.g.…”

Section: Introductionmentioning

confidence: 81%

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60GHz-band low loss on-chip band pass filter with patterned ground shields for millimeter wave CMOS SoC

Pokharel

Liu

Dong

et al. 2011

2011 IEEE MTT-S International Microwave Symposium

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This paper presents a design of an improved on-chip open loop resonator band pass filter (OLR-BPF) for 60 GHz millimeter-wave applications in 0.18 µm CMOS technology. The proposed on-chip BPF employs the folded open loop structure on patterned ground shields. The adoption of a folded structure for the OLR-BPF and utilization of two transmissions zero permits a compact size and high selectivity for the BPF. In addition, the patterned ground shields obviously slowed down the guided waves, which enables a further reduction of the physical length of the resonator and finally an improvement of the insertion loss of the BPF. By comparison between the electromagnetic (EM) simulations and measurement results, the proposed BPF has the center frequency of 59 GHz, insertion loss 2.77 dB, band width 14 GHz, return loss is less than 27.5 dB, and chip size 910×650 µm 2 (including bonding pads).

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Section: Introductionmentioning

confidence: 81%

“…These disadvantages make them difficult to be employed in the 60 GHz wireless communications standard. For example, the lumped component BPF [1] showed excellent selectivity response and compact size, however, the 6.9 dB insertion loss is too high to be employed in real implementation. In ref.…”

Section: Introductionmentioning

confidence: 99%

60GHz-band low loss on-chip band pass filter with patterned ground shields for millimeter wave CMOS SoC

Pokharel

Liu

Dong

et al. 2011

2011 IEEE MTT-S International Microwave Symposium

View full text Add to dashboard Cite

show abstract

“…As can be seen, the proposed filter exhibits the smallest layout area and achieved good S 11 and S 22 performances. Besides, the insertion loss (1/S 21 ) of our filter (Ϫ2.55 dB at 62.5 GHz) is better than those (Ϫ2.7 dB to Ϫ4.9 dB) of the CMOS filters in [10 -12], that (Ϫ6.4 dB at 77.3 GHz) of the SiGe filter in [13], and that (Ϫ3.4 dB at 40 GHz) of the filter on insulated silicon substrate (achieved by proton implantation) and that (Ϫ10 dB at 40 GHz) of the filter on normal silicon substrate with an additional 1.5-mthick oxide isolation layer [14]. The excellent performances of the proposed filter suggest that it is very suitable for 60-GHz-band communication system applications.…”

Section: Measurement Results and Discussionmentioning

confidence: 77%

Miniature 60‐GHz‐band bandpass filter with 2.55‐dB insertion‐loss using standard 0.13 μm CMOS technology

Chang

et al. 2009

Micro & Optical Tech Letters

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“…As depicted, an NF improvement of 1-3 dB can be achieved, provided that the filter exhibits low insertion loss and bandwidth performance, as simulated. Recent work presented in [29] also provides lowinsertion loss 77-GHz bandpass filters designed in SiGe.…”

Section: Integrated Passive Imagermentioning

confidence: 99%

SiGe Receiver Front Ends for Millimeter-Wave Passive Imaging

Powell

Kim

Sodini

2008

IEEE Trans. Microwave Theory Techn.

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A wideband 77-GHz front-end receiver for passive imaging has been designed and characterized. This system comprises a fully differential low-noise amplifier (LNA), double-balanced mixer, and voltage-controlled oscillator (VCO). The 77-GHz LNA achieves 4.9-6.0-dB noise figure (NF), 18-26-dB gain, and 11 and 22 of 13.0 and 12.8 dB, respectively. The double-balanced mixer achieves 12-14-dB NF, 20-26-dB conversion gain, and 26-dBm P1dB (input referred). The VCO achieves output power from 2 to 0 dBm with phase noise of 93 dBc/Hz at 72 GHz, and can be tuned by approximately 3 GHz. The NF can be substantially improved with the addition of image-reject Chebyshev bandpass filters at the interface between the LNA and mixer. The 77-GHz receiver achieves 40-46-dB max conversion gain, output-referred P1dB of 2 dBm, and power dissipation of 195 mW. A 90-GHz LNA has also been characterized as an integral part of a higher resolution 94-GHz imager. This LNA achieves 22-dB maximum gain, 7.0-dB NF, and 25-and 10-dB 11 and 22, respectively, at 90 GHz. This LNA also exhibits excellent ultra-wideband performance, achieving 10-dB gain from 40 to 100 GHz. Index Terms-Concealed weapons detection, low-noise amplifier (LNA), millimeter wave, mixer, 94 GHz, passive imaging, 77 GHz, SiGe, ultra-wideband, voltage-controlled oscillator (VCO).

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Integrated Bandpass Filter at 77 GHz in SiGe Technology

Cited by 50 publications

References 7 publications

60GHz-band low loss on-chip band pass filter with patterned ground shields for millimeter wave CMOS SoC

60GHz-band low loss on-chip band pass filter with patterned ground shields for millimeter wave CMOS SoC

Miniature 60‐GHz‐band bandpass filter with 2.55‐dB insertion‐loss using standard 0.13 μm CMOS technology

SiGe Receiver Front Ends for Millimeter-Wave Passive Imaging

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