Integratable Nanowire Transistors

Quitoriano, Nathaniel J.; Kamins, Theodore I.

doi:10.1021/nl802292h

Cited by 55 publications

(50 citation statements)

References 20 publications

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“…Granted that the technological momentum is helping to provide any kind of 1-D nanomaterials on any substrate, it becomes obvious that we must now look for ways to take advantage of them in designing devices for applications in high-speed electronics, photonics, energy conversion, sensing, and imaging by incorporating a collection of materials on any substrate. The functionality of conventional electronics (e.g., CMOS technology) and photonics can be significantly augmented by using 1-D self-assembled NWs as device channels [11], light emitters, and detectors [68]- [70].…”

Section: E Nanowire Heteroepitaxymentioning

confidence: 99%

A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities

Logeeswaran

Nayak

et al. 2011

IEEE J. Select. Topics Quantum Electron.

140

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Abstract-One-dimensional semiconductor nanostructures (nanowires (NWs), nanotubes, nanopillars, nanorods, etc.) based photodetectors (PDs) have been gaining traction in the research community due to their ease of synthesis and unique optical, mechanical, electrical, and thermal properties. Specifically, the physics and technology of NW PDs offer numerous insights and opportunities for nanoscale optoelectronics, photovoltaics, plasmonics, and emerging negative index metamaterials devices. The successful integration of these NW PDs on CMOS-compatible substrates and various low-cost substrates via direct growth and transfer-printing techniques would further enhance and facilitate the adaptation of this technology module in the semiconductor foundries. In this paper, we review the unique advantages of NW-based PDs, current device integration schemes and practical strategies, recent device demonstrations in lateral and vertical process integration with methods to incorporate NWs in PDs via direct growth (nanoepitaxy) methods and transfer-printing methods, and discuss the numerous technical design challenges. In particular, we present an ultrafast surface-illuminated PD with 11.4-ps full-width at half-maximum (FWHM), edge-illuminated novel waveguide PDs, and some novel concepts of light trapping to provide a full-length discussion on the topics of: 1) low-resistance contact and interfaces for NW integration; 2) high-speed design and impedance matching; and 3) CMOS-compatible massmanufacturable device fabrication. Finally, we offer a brief outlook into the future opportunities of NW PDs for consumer and military application.

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Section: E Nanowire Heteroepitaxymentioning

confidence: 99%

A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities

Logeeswaran

Nayak

et al. 2011

IEEE J. Select. Topics Quantum Electron.

140

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“…The field-effect mobility of the nanowire device using various nanowire materials and processes is between 6.93 and 510 cm 2 /(V · s) [9]- [11]. In addition, the field-effect mobility of an a-Si thin-film transistor, which is applied in the present display system, is less than 1 cm 2 /(V · s).…”

Section: Characteristics Of the Nanowire Transistormentioning

confidence: 99%

A Low-Output-Noise Multistage Shift Register Using Tin Dioxide Nanowire Transistors

Ahn

Kang

et al. 2012

IEEE Electron Device Lett.

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A multistage shift register using the parallel connection technique of n-channel nanowire transistors for low output noise is proposed. The proposed circuit decreases the output noise by eliminating the direct connection of the clock signal to the gate of the pull-down transistor of the output stage. Measured results show that the output noise of the proposed circuit is under 0.16 V when the input voltage is 5.0 V and the operating frequency of the proposed circuit is 900 Hz at the capacitive load of 150 pF. The maximum operating frequency of the proposed circuit at the loading condition of the wide-video-graphic-array resolution can be up to 46 kHz. Index Terms-Flat panel display, low noise, multistage shift register, nanowire transistor, tin dioxide (SnO 2 ).

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“…Recently, the HP group has advanced this technique to realize a top-gated MOSFET (Quitoriano & Kamins, 2008). Fig.…”

Section: Wwwintechopencommentioning

confidence: 99%

Progress Toward Nanowire Device Assembly Technology

Li¹,

Delaunay²

2010

Nanowires

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Integratable Nanowire Transistors

Cited by 55 publications

References 20 publications

A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities

A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities

A Low-Output-Noise Multistage Shift Register Using Tin Dioxide Nanowire Transistors

Progress Toward Nanowire Device Assembly Technology

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