2011
DOI: 10.1103/physrevlett.107.126806
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Integer Quantum Hall Effect in Trilayer Graphene

Abstract: By using high-magnetic fields (up to 60 tesla), we observe compelling evidences of Integer Quantum Hall Effect in trilayer graphene. The magnetotransport fingerprints are similar to that of the graphene monolayer, except the absence of a plateau at filling factor ν = 2. At very low filling factor, the Hall resistance vanishes due to the presence of mixed electron and hole carriers induced by disorder. The measured Hall resistivity plateaus are well reproduced theoretically, using a selfconsistent Hartree calcu… Show more

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Cited by 108 publications
(104 citation statements)
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References 40 publications
(42 reference statements)
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“…Measured in semiconductor 2D electron gases more than 30 years ago 26 and in the yearly days of graphene, in both monolayer 5,27 and bilayer samples 28 (very recently also in trilayer graphene 29 ), the static quantum Hall effect is an hallmark elementary of excitations in electronic systems. 30 Its dynamical analogue-the ac quantum Hall effectcan provide additional information about charge carriers, such as the opening of gaps in the spectrum.…”
Section: Equation Of Motion Methods For the Calculation Of The Magmentioning
confidence: 99%
“…Measured in semiconductor 2D electron gases more than 30 years ago 26 and in the yearly days of graphene, in both monolayer 5,27 and bilayer samples 28 (very recently also in trilayer graphene 29 ), the static quantum Hall effect is an hallmark elementary of excitations in electronic systems. 30 Its dynamical analogue-the ac quantum Hall effectcan provide additional information about charge carriers, such as the opening of gaps in the spectrum.…”
Section: Equation Of Motion Methods For the Calculation Of The Magmentioning
confidence: 99%
“…The order at which the degeneracy is broken reflects the underlying competing symmetries. Prior works have reported resolution of several symmetry-broken QH states [38][39][40] , albeit only in single-gated samples where the interlayer potential U⊥ and charge density n are not independently controlled. In this Letter, by using transport measurements on high mobility dual-gated r-TLG devices, we explore symmetry-broken LLs via careful control of U⊥, B and n. All integer plateaus of the zeroth LL in the hole-doped regime are resolved in high B.…”
mentioning
confidence: 99%
“…22 Using magnetic fields up to 60 T, there has been evidence of the integer quantum Hall effect in trilayer graphene. 23 The Hall resistivity plateaus have been reproduced by using a self-consistent Hartree calculation on ABC-stacked graphene. 23 It has been suggested that the differences in the quantum Hall effect between ABC and ABA stacking might be used to identify the stacking order of high-quality trilayer samples.…”
mentioning
confidence: 99%