Instability of the Sb vacancy in GaSb

Segercrantz, Natalie; Slotte, Jonatan; Tuomisto, Filip; Mizohata, Kenichiro; Räisänen, J.

doi:10.1103/physrevb.95.184103

Cited by 16 publications

(14 citation statements)

References 31 publications

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“…In this Letter, we show that Be impurities exhibit amphoteric behavior in GaN, similar to what has been found for Li impurities in ZnO [11,12] and for certain vacancy-type defects in III-V semiconductors [13,14]. This finding suggests a universal property of small elements substituting for large cation atoms in these compounds, that is, the rise of a competition between substitutional and interstitial lattice sites.…”

supporting

confidence: 82%

Amphoteric Be in GaN: Experimental Evidence for Switching between Substitutional and Interstitial Lattice Sites

et al. 2017

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We show that Be exhibits amphoteric behavior in GaN, involving switching between substitutional and interstitial positions in the lattice. This behavior is observed through the dominance of Be_{Ga} in the positron annihilation signals in Be-doped GaN, while the emergence of V_{Ga} at high temperatures is a consequence of the Be impurities being driven to interstitial positions. The similarity of this behavior to that found for Na and Li in ZnO suggests that this could be a universal property of light dopants substituting for heavy cations in compound semiconductors.

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supporting

confidence: 82%

Amphoteric Be in GaN: Experimental Evidence for Switching between Substitutional and Interstitial Lattice Sites

et al. 2017

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“…Undoped GaSb exhibits p ‐type conductivity regardless of the growth methods and growth conditions . Ga antisite (Ga Sb ) has the lowest defect formation energy and acts as an acceptor because of its negative charge state . In the case of undoped InSb, interstitial In (In i ) and Sb antisite (Sb In ) have the lowest defect formation energies under In rich and Sb rich conditions, respectively; these defects act as donors because of their positive charge states .…”

Section: Resultsmentioning

confidence: 99%

Characterization of a Flexible InGaSb/PI Thin Film Grown by RF Magnetron Sputtering and Aqueous Stability Improvement via Surface Coating

Nishimoto

Fujihara

2018

Physica Status Solidi (a)

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Flexible InGaSb thin films are considered useful for reducing the power generation cost of thermophotovoltaic (TPV) systems. The growth and evaluation of flexible InGaSb thin films on polyimide (PI) films by multicathode RF magnetron sputtering are reported here. The obtained InGaSb/PI thin film is a polycrystalline and nearly stoichiometric (In 0.24 Ga 0.27 Sb 0.49 ) thin film. The conduction type is n-type, and the electron mobility is 108 cm 2 V À1 s À1 . The analysis of its electrical properties shows that In acts as a surfactant during the crystal growth. Two types of donors (In i or Sb In and defects related to the dangling bonds in the grain boundary) are observed in the InGaSb/PI thin film, with no residual acceptor. Furthermore, it is important to reduce the environmental release of TPV films by improving their aqueous stability and thereby expand the application range of largearea TPV systems. The effectiveness of a surface coating material, namely (3-mercaptopropyl) trimethoxysilane (MPT), is clarified by comparing it with the efficacy of other coating materials. The MPT coating covers the entire InGaSb/PI thin film and helps reduce its toxicity without affecting its properties. These findings lead to the conclusion that the flexible MPT-coated InGaSb/PI thin film has potential applications in TPV cells.

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“…In our previous studies, [ 20,21 ] the end of range of the ions was shifted deeper into sample 2 by mechanically grinding sample 1 thinner. A few things need to be considered when performing the thinning.…”

Section: Experimental Planningmentioning

confidence: 99%

“…The thinning of sample 1 will also make it more brittle and caution need to be taken when the sample package is mounted to the sample holder, as cracks in the sample will influence the PAS measurements. For the Ge [ 20 ] and GaSb [ 21 ] studies, where the density of the sample material is above 5 g cm −3 , sample 1 was thinned to a thickness of ≈250 μm. This allowed for enough thickness in sample 1 to ensure that the amount of positrons reaching the sample surface was insignificant.…”

Section: Experimental Planningmentioning

confidence: 99%

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In Situ Positron Annihilation Spectroscopy Analysis on Low‐Temperature Irradiated Semiconductors, Challenges and Possibilities

Slotte

Kilpeläinen

Segercrantz

et al. 2020

Physica Status Solidi (a)

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A unique experimental setup at the Accelerator Laboratory of the University of Helsinki enables in situ positron annihilation spectroscopy (PAS) analysis on ion irradiated samples. In addition, the system enables temperature control (10–300 K) of the sample both during irradiation and during subsequent positron annihilation measurements. Using such a system for defect identification and annealing studies comes with a plethora of possibilities for elaborate studies. However, the system also poses some restrictions and challenges to these possibilities, both related to irradiation and to the PAS analysis. This review tries to address these issues.

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Instability of the Sb vacancy in GaSb

Cited by 16 publications

References 31 publications

Amphoteric Be in GaN: Experimental Evidence for Switching between Substitutional and Interstitial Lattice Sites

Amphoteric Be in GaN: Experimental Evidence for Switching between Substitutional and Interstitial Lattice Sites

Characterization of a Flexible InGaSb/PI Thin Film Grown by RF Magnetron Sputtering and Aqueous Stability Improvement via Surface Coating

In Situ Positron Annihilation Spectroscopy Analysis on Low‐Temperature Irradiated Semiconductors, Challenges and Possibilities

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