2010
DOI: 10.1016/j.surfrep.2010.09.001
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Instability, intermixing and electronic structure at the epitaxial LaAlO3/SrTiO3

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Cited by 287 publications
(249 citation statements)
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References 100 publications
(143 reference statements)
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“…Since its discovery 2 several competing mechanisms have been proposed and intensely debated to explain the origin of the interfacial 2D electron gas, including electronic reconstruction, 19 oxygen vacancies in the SrTiO 3 substrate, [20][21][22] and intermixing between the LaAlO 3 film and the SrTiO 3 substrate. 23,24 According to the electronic reconstruction mechanism, because the atomic layers are charge neutral in SrTiO 3 but charged in LaAlO 3 , a diverging electric potential is built up in a LaAlO 3 film grown on a TiO 2 -terminated SrTiO 3 substrate. This leads to the transfer of half of an electron from the LaAlO 3 film surface to SrTiO 3 when the LaAlO 3 layer is thicker than 4 unit cells, creating a 2D electron gas at the interface with a sheet carrier density of 3.3 × 10 14 /cm 2 for sufficiently thick LaAlO 3 .…”
Section: Resultsmentioning
confidence: 99%
“…Since its discovery 2 several competing mechanisms have been proposed and intensely debated to explain the origin of the interfacial 2D electron gas, including electronic reconstruction, 19 oxygen vacancies in the SrTiO 3 substrate, [20][21][22] and intermixing between the LaAlO 3 film and the SrTiO 3 substrate. 23,24 According to the electronic reconstruction mechanism, because the atomic layers are charge neutral in SrTiO 3 but charged in LaAlO 3 , a diverging electric potential is built up in a LaAlO 3 film grown on a TiO 2 -terminated SrTiO 3 substrate. This leads to the transfer of half of an electron from the LaAlO 3 film surface to SrTiO 3 when the LaAlO 3 layer is thicker than 4 unit cells, creating a 2D electron gas at the interface with a sheet carrier density of 3.3 × 10 14 /cm 2 for sufficiently thick LaAlO 3 .…”
Section: Resultsmentioning
confidence: 99%
“…However, structural and XAS spectroscopic data [37], core-level photoemission spectroscopy [50], second har-monic generation [83] suggest an orbital reconstruction below the critical thickness.…”
Section: Discussion and Concluding Remarksmentioning
confidence: 98%
“…There have been other proposed mechanisms for the origin of carriers at the interface, which are based on defects in STO bulk, cation intermixing, and oxygen vacancies near the interface. [25][26][27] These issues will be not be dealt with in this paper.…”
Section: Introductionmentioning
confidence: 99%