Insights into the Temperature‐Dependent Switching Behavior of Three‐Gated Reconfigurable Field‐Effect Transistors

Abstract

Reconfigurable Field Effect Transistors In article number http://doi.wiley.com/10.1002/pssa.202300019, Giulio Galderisi and colleagues investigate the electrical properties of three‐gated reconfigurable field effect transistors (RFETs) in harsh temperature conditions, ranging from 80 to 475 K. Resulting insights into the physical mechanisms that regulate their switching are exhibited, providing useful data to understand in detail their operation. This way, various application scenarios open up for these emerging nanoelectronics devices.