Insights into the reactive ion etching mechanism of nanocrystalline diamond films as a function of film microstructure and the presence of fluorine gas

Yoon, Ju Heon; Lee, Wook Seong; Park, Jong Keuk; Hwang, Gyu Weon; Baik, Young‐Joon; Seong, Tae Yeon; Jeong, Joseph H.

doi:10.1063/1.3309420

Cited by 4 publications

(4 citation statements)

References 18 publications

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“…The chemical etching rate of diamond exceeds the ion sputtering rate. The role of the ion bombardment mostly consists in that defects are created in the surface layer, which makes lower the energy barrier for the chemical etching reaction [27].…”

Section: Resultsmentioning

confidence: 99%

“…To reduce the imperfection of the crystal lattice, diamond particles are subjected to a post-treatment via etching in oxygen, during which sp 2 carbon and defective diamond regions are removed [23][24][25][26][27][28][29]. However the problem of obtaining low-defect and low-strain nanodiamonds containing SiV colour centres remains unsolved.…”

Section: Introductionmentioning

confidence: 99%

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Low-strain heteroepitaxial nanodiamonds: fabrication and photoluminescence of silicon-vacancy colour centres

et al. 2016

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Nanodiamonds with the 'diamond' 1332.5 cm(-1) Raman line as narrow as 1.8 cm(-1) have been produced by reactive ion etching in oxygen plasma of heteroepitaxial diamond particles grown by microwave plasma enhanced chemical vapour deposition (MWPECVD) on silicon. After the etching, a doublet is recorded in the zero-phonon line photoluminescence spectra of an ensemble of silicon-vacancy (SiV) centres at 10 K. Each line of the doublet is split into two lines corresponding to the optical transitions between the split excited and ground energy levels of the SiV centres. These Raman and photoluminescent features have been observed previously only in low-strain homoepitaxial diamond films and single-crystal diamond.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Low-strain heteroepitaxial nanodiamonds: fabrication and photoluminescence of silicon-vacancy colour centres

et al. 2016

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“…There are no values for 15 s O 2 plasma exposures of bulk RuO 2 because these contact closures could not be fitted by a power law relation. [33][34][35][36] Prior to, and for short oxygen plasma exposure times, bulk RuO 2 resistance values exhibited much larger variations than values measured for surface RuO 2 , which can be attributed to a higher degree of susceptibility to physisorbed hydrocarbons that are not removed by vacuum conditions ͑10 −8 Torr͒ alone. for these samples and they exhibited far more variability in their initial values than the "surface" Ru samples.…”

Section: B Snl Bulk and Surface Oxide Comparisonsmentioning

confidence: 97%

Impact of in situ oxygen plasma cleaning on the resistance of Ru and Au-Ru based rf microelectromechanical system contacts in vacuum

Walker

Nordquist

Czaplewski

et al. 2010

Journal of Applied Physics

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Contact resistance measurements are reported for radio frequency microelectromechanical system switches operating in an ultrahigh vacuum system equipped with in situ oxygen plasma cleaning capabilities. Ru-based contacts were prepared by means of standard sputtering techniques, sputtering followed by postdeposition oxidation, ͑surface RuO 2 ͒ or reactive sputtering in the presence of oxygen ͑bulk RuO 2 ͒. In situ oxygen plasma cleaning lowered the resistance of Ru contacts by two or more orders of magnitude but not lower than Au contacts, irrespective of whether the Au contacts were cleaned. The time dependence of the resistance was fit to power law extrapolations to infer contact creep properties and resistance values at t = ϱ. Time-dependent creep properties of mixed Au-Ru contacts were observed to be similar to those of Au-Au contacts, while the absolute value of the resistance of such contacts was more comparable to Ru-Ru contacts. Prior to, and for short oxygen plasma exposure times, bulk RuO 2 resistance values exhibited much larger variations than values measured for surface RuO 2 . For O 2 plasma exposure times exceeding about 5 min, the bulk and surface RuO 2 resistance values converged, at both t = 0 and t = ϱ, with the t = ϱ values falling within experimental error of theoretical values predicted for ideal surfaces. The data strongly support prior reports in the surface science literature of oxygen plasma induced thickening of oxide layers present on Ru surfaces. In addition, they demonstrate that vacuum alone is insufficient to remove contaminants from the contact surfaces and/or prevent such contaminants from reforming after oxygen plasma exposure.

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“…The subsequent incident O* atoms bombardment may also chemically etch the damaged diamond surface by reacting with the sp 2 -bonded carbon preferentially, while the sp 3 -bonded carbon in diamond remains intact. The main advantage of CF 4 addition in the etching plasma is to reduce the surface roughness of the etched diamond. , The discharge of CF 4 molecule by electron impact can generate the CF 3 – , CF 3 , CF 2 , F – , and F ions in the reactive plasma of RIE, which have been observed at wavelengths of 599.0 nm for CF 3 and 637.0 nm for the F ion, respectively.…”

Section: Resultsmentioning

confidence: 54%

Investigations on Diamond Nanostructuring of Different Morphologies by the Reactive-Ion Etching Process and Their Potential Applications

Srinivasu

Sankaran

Tsai

et al. 2013

ACS Appl. Mater. Interfaces

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We report the systematic studies on the fabrication of aligned, uniform, and highly dense diamond nanostructures from diamond films of various granular structures. Self-assembled Au nanodots are used as a mask in the self-biased reactive-ion etching (RIE) process, using an O2/CF4 process plasma. The morphology of diamond nanostructures is a close function of the initial phase composition of diamond. Cone-shaped and tip-shaped diamond nanostructures result for microcrystalline diamond (MCD) and nanocrystalline diamond (NCD) films, whereas pillarlike and grasslike diamond nanostructures are obtained for Ar-plasma-based and N2-plasma-based ultrananocrystalline diamond (UNCD) films, respectively. While the nitrogen-incorporated UNCD (N-UNCD) nanograss shows the most-superior electron-field-emission properties, the NCD nanotips exhibit the best photoluminescence properties, viz, different applications need different morphology of diamond nanostructures to optimize the respective characteristics. The optimum diamond nanostructure can be achieved by proper choice of granular structure of the initial diamond film. The etching mechanism is explained by in situ observation of optical emission spectrum of RIE plasma. The preferential etching of sp(2)-bonded carbon contained in the diamond films is the prime factor, which forms the unique diamond nanostructures from each type of diamond films. However, the excited oxygen atoms (O*) are the main etching species of diamond film.

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Insights into the reactive ion etching mechanism of nanocrystalline diamond films as a function of film microstructure and the presence of fluorine gas

Cited by 4 publications

References 18 publications

Low-strain heteroepitaxial nanodiamonds: fabrication and photoluminescence of silicon-vacancy colour centres

Low-strain heteroepitaxial nanodiamonds: fabrication and photoluminescence of silicon-vacancy colour centres

Impact of in situ oxygen plasma cleaning on the resistance of Ru and Au-Ru based rf microelectromechanical system contacts in vacuum

Investigations on Diamond Nanostructuring of Different Morphologies by the Reactive-Ion Etching Process and Their Potential Applications

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