2014
DOI: 10.1039/c3ra45619f
|View full text |Cite
|
Sign up to set email alerts
|

Insights into solvent vapor annealing on the performance of bulk heterojunction solar cells by a quantitative nanomorphology study

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

4
13
0

Year Published

2015
2015
2021
2021

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 28 publications
(17 citation statements)
references
References 34 publications
(62 reference statements)
4
13
0
Order By: Relevance
“…On the other side, after treated by SVA, hole mobility increased to 9.4  10 -5 cm 2 /Vs, which corresponds to approximately an order of magnitude enhancement, while electron mobility remained nearly unchanged (~3.6  10 -4 cm 2 /Vs). As a result of improved charge balance, the overall device performance was dramatically improved except that V OC decreased slightly to 0.77 V, similar with the results in many other literature [11], [22]- [24]. The reduction of V OC can be attributed to the lowering in quasi-Fermi levels for electron and hole transport due to a depleted steady carrier density [25], [26].…”
Section: Resultssupporting
confidence: 87%
“…On the other side, after treated by SVA, hole mobility increased to 9.4  10 -5 cm 2 /Vs, which corresponds to approximately an order of magnitude enhancement, while electron mobility remained nearly unchanged (~3.6  10 -4 cm 2 /Vs). As a result of improved charge balance, the overall device performance was dramatically improved except that V OC decreased slightly to 0.77 V, similar with the results in many other literature [11], [22]- [24]. The reduction of V OC can be attributed to the lowering in quasi-Fermi levels for electron and hole transport due to a depleted steady carrier density [25], [26].…”
Section: Resultssupporting
confidence: 87%
“…On the other hand, mobility of electron of approximately 3.6 × 10 -4 cm 2 / Vs does not change. In summary, the overall performance of device was dramatically improved whereby a slight decrease in V oc of 0.77 V was observed, as previously reported [11,[22][23][24]. The cause of decrease in V oc is linked with the decrease in Quasi-Fermi levels for the transport of hole and electron [25,26].…”
Section: Resultssupporting
confidence: 60%
“…SVA in controlling the nanomorphology of block copolymers has been well established in the past decade . Most recently, it has been applied to OPVs . In SVA, solvent vapor can penetrate into the blend and drastically lower the glass transition temperature of the materials, and thus polymers/molecules in blends gain high mobility to organize into a lower energy state.…”
Section: Solvent Properties Used In Sva and Opv Performance Parametermentioning
confidence: 99%
“…When applying SVA into small‐molecule BHJ blends, phase separation and nucleation and growth will be two processes that dominate the kinetics of morphology evolution. Thus, a systematic study of the morphology change during SVA treatment, and correlating the morphology details with device performance are of high importance. In this study, we performed a systematic SVA study on a BHJ photoactive layer based on the DR3TBDTT molecule ( Figure a) (DR3TBDTT:[6,6]‐phenyl‐C 71 ‐butyric acid methyl ester (PC 71 BM)) and elucidated the morphology reasons for device performance improvement.…”
Section: Solvent Properties Used In Sva and Opv Performance Parametermentioning
confidence: 99%