2018
DOI: 10.1007/978-3-030-04789-4_59
|View full text |Cite
|
Sign up to set email alerts
|

Insight of Electronic and Thermoelectric Properties of CdSiAs2 Ternary Chalcopyrite from First Principles Calculations

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2022
2022
2022
2022

Publication Types

Select...
3

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(1 citation statement)
references
References 18 publications
0
1
0
Order By: Relevance
“…It is a 'vacancy' chalcopyrite formed by the sequence replacement of group II atoms and deficits in group I locations in the I-III-VI2 chalcopyrite structure [16]. Hahn et al were the first to synthesize it in powder form [17]. High nonlinear susceptible parameters, large transparency ranges (from 0.5 to 13 m), and significant polarisation define HGS structure [18].…”
Section: Introductionmentioning
confidence: 99%
“…It is a 'vacancy' chalcopyrite formed by the sequence replacement of group II atoms and deficits in group I locations in the I-III-VI2 chalcopyrite structure [16]. Hahn et al were the first to synthesize it in powder form [17]. High nonlinear susceptible parameters, large transparency ranges (from 0.5 to 13 m), and significant polarisation define HGS structure [18].…”
Section: Introductionmentioning
confidence: 99%