Insight mechanism of MXene for the future generation of highly efficient energy storage device

Solangi, Nadeem Hussain; Abbas, Aumber; Mubarak, Nabisab Mujawar; Karri, Rama Rao; Aleithan, Shrouq H.; Kazmi, Jamal; Ahmad, Waqas; Khan, Karim

doi:10.1016/j.mtsust.2024.100896

Materials Today Sustainability

2024

DOI: 10.1016/j.mtsust.2024.100896

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Insight mechanism of MXene for the future generation of highly efficient energy storage device

Nadeem Hussain Solangi,

Aumber Abbas,

Nabisab Mujawar Mubarak

et al.

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2024

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Interlayer Charge Transition and Broadband Polarization Photodetection and Imaging Based on In₂Se₃/ReS₂ van der Waals Heterostructure

Ahmad,

Rehman,

Younis

et al. 2024

Laser & Photonics Reviews

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Abstract2D van der Waal (vdWs) heterostructures present unique optoelectronic characteristics, making them favorable layer structures for constructing promising optoelectronic devices with multifunctional applications. Nevertheless, as a result of significant interface recombination of the photogenerated electron‐hole pairs and the presence of various absorption edges within constituent layers, they are prone to experiencing low carrier collection efficiency. In this work, a combined theoretical and experimental investigation are presented on the In2Se3/ReS2 vdWs heterostructure, aimed at developing high‐performance and broadband photodetector with multifunctionalities. In theoretical investigations, it is observed that, by adjusting the polarization states (+P to −P) in the In2Se3 layer, band alignment can be effectively tuned from type‐I to type‐II, providing a narrow bandgap of ≈0.65 eV, which is beyond that of their individual constituents. As a photodetector, the device shows broadband photoresponse ranging from 532 to 1550 nm with ultrahigh responsivity (99.36 AW−1), detectivity (3.5 × 1013 Jones), and external quantum efficiency (34195%). Additionally, competitive polarization sensitivity across the broad spectrum and imagining capability are observed with In2Se3/ReS2 vdWs heterostructure. This study demonstrates that In2Se3/ReS2 vdWs heterostructure device provides a promising technique for developing high‐performance 2D optoelectronic devices with multifunctionalities.

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Interlayer Charge Transition and Broadband Polarization Photodetection and Imaging Based on In₂Se₃/ReS₂ van der Waals Heterostructure

Ahmad,

Rehman,

Younis

et al. 2024

Laser & Photonics Reviews

View full text Add to dashboard Cite

show abstract

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Insight mechanism of MXene for the future generation of highly efficient energy storage device

Cited by 1 publication

References 157 publications

Interlayer Charge Transition and Broadband Polarization Photodetection and Imaging Based on In₂Se₃/ReS₂ van der Waals Heterostructure

Interlayer Charge Transition and Broadband Polarization Photodetection and Imaging Based on In₂Se₃/ReS₂ van der Waals Heterostructure

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Insight mechanism of MXene for the future generation of highly efficient energy storage device

Cited by 1 publication

References 157 publications

Interlayer Charge Transition and Broadband Polarization Photodetection and Imaging Based on In2Se3/ReS2 van der Waals Heterostructure

Interlayer Charge Transition and Broadband Polarization Photodetection and Imaging Based on In2Se3/ReS2 van der Waals Heterostructure

Contact Info

Product

Resources

About

Interlayer Charge Transition and Broadband Polarization Photodetection and Imaging Based on In₂Se₃/ReS₂ van der Waals Heterostructure

Interlayer Charge Transition and Broadband Polarization Photodetection and Imaging Based on In₂Se₃/ReS₂ van der Waals Heterostructure