Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on <i>m</i>-plane freestanding GaN substrates

Tang, Feng; Zhu, Tongtong; Fu, Wai Yuen; Oehler, Fabrice; Zhang, Siyuan; Griffiths, James T.; Humphreys, C. J.; Martin, T.; Bagot, Paul A.J.; Moody, Michael P.; Patra, Saroj Kanta; Schulz, Stefan; Dawson, Philip E.; Church, Stephen; Jacobs, Janet; Oliver, Rachel A.

doi:10.1063/1.5097411

Cited by 6 publications

(2 citation statements)

References 49 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Indeed, atom probe tomography (APT) has shown that most InGaN alloys are random alloys . For indium compositions exceeding x = 0.14, a recent APT study reported that the distribution of indium atoms in InGaN can deviate from being truly random and lead to clusters of indium atoms . Our calculations of defects in different configurations for a given In composition allow us to comment on how the coordination of In atoms around an impurity affects the formation energy E f .…”

Section: Resultsmentioning

confidence: 87%

Deep‐Level Defects and Impurities in InGaN Alloys

Wickramaratne

Dreyer

Shen

et al. 2019

Physica Status Solidi (b)

View full text Add to dashboard Cite

In this study, density functional theory calculations with a hybrid functional are used to examine the charge‐state transition levels of native point defects and impurities in InGaN alloys, with the goal of identifying centers that play a role in defect‐assisted recombination. Explicit alloy calculations are used to monitor the dependence of defect levels on indium content and distribution of In atoms. The relative shift (or lack thereof) of the charge‐state transition levels of the different defects is explained by the atomic character of the defect state and whether it is derived from valence‐band or conduction‐band states of the host material or acts as an atomic‐like impurity. The various possible atomic configurations of In and Ga cations for a given composition of InGaN lead to a distribution of charge‐state transition levels. Defects on the nitrogen site lead to a larger spread in levels compared with defects on the cation site.

show abstract

Section: Resultsmentioning

confidence: 87%

Deep‐Level Defects and Impurities in InGaN Alloys

Wickramaratne

Dreyer

Shen

et al. 2019

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…These are important elements for the interpretation of the carrier localization mechanisms -and thus for the explanation of the radiative efficiency -within these quantum confined emitters that constitute the active region of standard LEDs [3]. Other statistical studies have pointed out that the (In,Ga)N behavior is different in quantum wells grown on non-polar planes, on which In clustering becomes possible [4][5]. However, there are many other examples of statistical correlation in the literature, not only on wide bandgap semiconductors [6], but also on semiconductor nanoparticles within insulating matrices [7][8][9] and on III-V nanowires [10].…”

Section: Correlative Methods With Optical Spectroscopymentioning

confidence: 99%

Correlative atom probe tomography and optical spectroscopy: An original gateway to materials science and nanoscale physics

Russo

Rigutti

2022

MRS Bulletin

View full text Add to dashboard Cite

Lorenzo Rigutti joined the instrumentation team at GPM Rouen in 2012, after a PhD at the University of Bologna, Italy (2006) and a postdoc at the institute of Fundamental Electronics in Orsay, France. He is expert in semiconductor physics and characterization. His current research focuses on compositional metrology by APT and its correlation with optical spectroscopy. His recent studies have addressed individual APT specimens in sequence with µPL, STEM and APT, demonstrating the possibility of measuring µPL from field emission tips within an APT instrument. He has also demonstrated the Photonic Atom Probe, an instrument coupling APT and in-situ µPL.

show abstract

Simulation of GaN-based light emitting diodes incorporating composition fluctuation effects

Rahman

Jamal-Eddine

Xia

et al. 2022

Journal of Applied Physics

View full text Add to dashboard Cite

III-Nitride light emitting diodes (LEDs) are widely used in a range of high efficiency lighting and display applications, which has enabled significant energy savings in the last decade. Despite the wide application of GaN LEDs, transport mechanisms across InGaN/GaN heterostructures in these devices are not well explained. Fixed polarization sheet charges at InGaN/GaN interfaces lead to large interface dipole charges, which create large potential barriers to overcome. One-dimensional models for transport across such heterostructures predict turn-on voltages that are significantly higher than that found in real devices. As a result, conventional models for transport cannot predict the performance of new designs such as for longer wavelength LEDs or for multi-quantum well LEDs. In this work, we show that incorporating low and high indium compositions within quantum wells at the submicrometer scale can provide an accurate prediction of the characteristics of GaN/InGaN light emitting diodes.

show abstract

Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates

Abstract: Insight into the impact of atomic-and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates. Journal of Applied Physics, 125(22), [225704].

Cited by 6 publications

References 49 publications

Deep‐Level Defects and Impurities in InGaN Alloys

Deep‐Level Defects and Impurities in InGaN Alloys

Correlative atom probe tomography and optical spectroscopy: An original gateway to materials science and nanoscale physics

Simulation of GaN-based light emitting diodes incorporating composition fluctuation effects

Contact Info

Product

Resources

About