“…Copper indium sulfide (CIS) is considered as a promising absorber material in thin film photovoltaics [8], because of its higher absorption coefficient (10 5 cm À1 ), direct band gap nearly close to ideal solar cell bandgap (1.52 eV) and nontoxicity [6,[9][10][11]. Based on detailed literature survey the synthesis of CuInS 2 shows different types of morphologies, such as flakes [12], nanoparticles [13,14], nano rods [15], nanotubes [3], foam-like nanocrystallites [16], flower vase like nanostructures [17] and microspheres [18,19]. For device applications CIS films were deposited by various deposition methods such as chemical bath deposition (CBD) [20,21], chemical vapor deposition (CVD) [22], electrochemical deposition (ED) [5,23,24], molecular beam epitaxy (MBE) [25], flash evaporation [26], spray pyrolysis [27][28][29], reactive magnetron sputtering [30], solvothermal [31], successive ionic layer adsorption and reaction (SILAR) [32], sol-gel [33] and photochemical deposition (PCD) [34].…”