Insertion strategy for EUV lithography

Wood, O. R.; Arnold, John; Brunner, Timothy A.; Burkhardt, Martin; Chen, James H.-C.; Civay, Deniz; Fan, S.; Gallagher, Emily; Halle, Scott; He, Ming; Higgins, Craig; Katō, Hirokazu; Kye, Jongwook; Koay, Chiew-Seng; Landie, Guillaume; Leung, P.; McIntyre, Gregory; Nagai, Satoshi; Petrillo, Karen; Raghunathan, Sudhar; Schlief, Ralph E.; Sun, Lei; Wagner, Alfred; Wallow, Tom; Yin, Yunpeng; Zhu, Xingyi; Colburn, Matthew; Corliss, Daniel; Smolinski, Cecilia

doi:10.1117/12.916292

Cited by 21 publications

(13 citation statements)

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“…1,4,18,19) A number of research groups have also shown the potential of unconventional inorganic 5,11) resists in further stretching these resolution limits. However, as discussed in previous chapters, concurrently achieving high resolution with the set of LWR/LER and sensitivity targets remains a challenge.…”

Section: Resist Processingmentioning

confidence: 99%

“…In particular, the effect and possible solutions to the trade-off relationship between EUV resist targets, namely, resolution, LWR/LER, and sensitivity, which have been constant topics in EUVL, [8][9][10]14,17) are described and reviewed. Recent works on resist materials focusing on conventional and nonconventional chemical platforms 1,4,5,[11][12][13]18,19) are also discussed. A review of proposed alternative resist processes, observed to focus mainly on the difficult issue of LWR/LER, is also presented.…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3] To realize the productivity targets in this lithographic technology, EUV resist materials and their related processes play a significant role. Recent advances in these materials and process technologies are largely credited to the cooperation and focused efforts of various sectors of the resist community (e.g., industry consortia, universities, and material/ tool manufacturers).…”

Section: Introductionmentioning

confidence: 99%

“…The rank of resist technology went down to third below the mask and source technologies in 2008. With the realization of EUVL approaching, [1][2][3] the critical issues were revised to a focus area in 2008. The focus area was discussed specifically from the viewpoint of the 22 nm half-pitch insertion of EUVL in 2009.…”

Section: Introductionmentioning

confidence: 99%

“…Recent advances in these materials and process technologies are largely credited to the cooperation and focused efforts of various sectors of the resist community (e.g., industry consortia, universities, and material/ tool manufacturers). 1,[4][5][6][7][8][9][10] Specifically, industry consortia such as Selete, SEMATECH, IMEC, and recently, EIDEC have and continue to promote very conducive research environments for device manufacturers, universities, resist resin/material suppliers, and tool manufacturers. Such collaborations have led to the investigation and realization of new and exciting resist platforms 5,[11][12][13] and processes.…”

Section: Introductionmentioning

confidence: 99%

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Resist Materials and Processes for Extreme Ultraviolet Lithography

Itani¹,

Kozawa

2012

Jpn. J. Appl. Phys.

163

153

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Extreme ultraviolet (EUV) radiation, the wavelength of which is 13.5 nm, is the most promising exposure source for next-generation semiconductor lithography. The development of EUV lithography has been pursued on a worldwide scale. Over the past decade, the development of EUV lithography has significantly progressed and approached its realization. In this paper, the resist materials and processes among the key technologies of EUV lithography are reviewed. Owing to its intensive development, the resist technology has already closely approached the requirements for the 22 nm node. The focus of the development has shifted to the 16 nm node and beyond. Despite the trade-off relationships among resolution, line edge roughness/line width roughness, and sensitivity, the capability of resist technology will go beyond the 16 nm node.

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Section: Resist Processingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Resist Materials and Processes for Extreme Ultraviolet Lithography

Itani¹,

Kozawa

2012

Jpn. J. Appl. Phys.

163

153

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Accurate and efficient evaluation of the ionization potentials of extreme ultraviolet photoresists using density functionals and semi-empirical methods

Du,

Ying,

Han

et al. 2024

Moore. More

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Extreme ultraviolet (EUV) photoresists have become the core materials in lithography with nanometer-sized patterns and are actively explored on the path to realizing smaller critical dimensions. These photoresists can be small molecule-, polymer-, or organic–inorganic hybrid-based, with the full molecular working mechanism under investigation. For the rational design of EUV photoresists, theoretical guidance using tools like first-principle calculations and multi-scale simulations can be of great help. Considering the extremely high standard of accuracy in EUV lithography, it is critical to ensure the adoption of the appropriate methodologies in the theoretical evaluation of EUV photoresists. However, it is known that density functionals and semi-empirical methods differ in accuracy and efficiency, without a universal rule across materials. This poses a challenge in developing a reliable theoretical framework for calculating EUV photoresists. Here, we present a benchmark investigation of density functionals and semi-empirical methods on the three main types of EUV photoresists, focusing on the ionization potential, a key parameter in their microscopic molecular reactions. The vertical detachment energies (VDE) and adiabatic detachment energies (ADE) were calculated using 12 functionals, including pure functionals, hybrid functionals, Minnesota functionals, and the recently developed optimally tuned range-separated (OTRS) functionals. Several efficient semi-empirical methods were also chosen, including AM1, PM6, PM7, and GFN1-xTB in the extended tight-binding theoretical framework. These results guide the accurate and efficient calculation of EUV photoresists and are valuable for the development of multi-scale lithography protocols. Graphical Abstract

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