2002
DOI: 10.1021/jp021490f
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Insertion Mechanism of N2and O2into Tn(n= 8, 10, 12)-Silsesquioxane Framework

Abstract: The process of insertion of molecular oxygen and nitrogen into polyhedral oligomeric silsesquioxanes (POSS) has been investigated theoretically. Using ab initio methods, the N2interaction with the POSS has been described with restricted Hartree−Fock (RHF) with a triple-ζ basis set, while systems involving O2 require restricted open shell (ROHF) wave functions, to account for their open-shell ground states. This insertion process is described in terms of the energetic change that the system X2::POSS undergoes w… Show more

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Cited by 36 publications
(37 citation statements)
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References 84 publications
(59 reference statements)
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“…The Ca 2+ (SI)-X 2 (X 2 ) N 2 , O 2 ) equilibrium internuclear distance refers to a position of the adsorbate molecule at the top of the energy barrier on its way to penetrate the T 6 O 6 ring. Though this barrier was calculated to be sufficiently low for siliceous D6R, 13 the adsorption complex could not be localized inside the D6R.…”
Section: Interaction Of N 2 and O 2 Withmentioning
confidence: 97%
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“…The Ca 2+ (SI)-X 2 (X 2 ) N 2 , O 2 ) equilibrium internuclear distance refers to a position of the adsorbate molecule at the top of the energy barrier on its way to penetrate the T 6 O 6 ring. Though this barrier was calculated to be sufficiently low for siliceous D6R, 13 the adsorption complex could not be localized inside the D6R.…”
Section: Interaction Of N 2 and O 2 Withmentioning
confidence: 97%
“…13 In general, the atom that interacts directly with the extraframework cation acquires a partial negative charge or remains neutral, while the more distant atom acquires a positive charge, see Table 5. The "bare" cations induce very high polarization in the adsorbate molecule, particularly Ca 2+ .…”
Section: Interaction Of N 2 and O 2 Withmentioning
confidence: 99%
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“…The OAPS is the type of POSS with a precise pore opening in face and the aminophenyl organic functional groups at eight silicon vertices. The distance between two diametrical opposite silicon atoms was estimated to be 4.442 Å based on computational studies [60,61]. Tejerina and Gordon assessed the feasibility of inserting small gas penetrants (i.e.…”
Section: Samplementioning
confidence: 99%
“…O 2 and N 2 ) into the faces of three different POSSs (i.e. T 8 , T 10 , and T 12 , where the "T n "indicates "n" silsesquioxenyl (HSiO 3/2 ) units) by using Hartree-Fock calculations [60]. They demonstrated that O 2 and N 2 were not accessible to the cage of T 8 POSS due to their high insertion energy into the cage of T 8 POSS, which is comparable to the dissociation enthalpy of the Si-O bond.…”
Section: Samplementioning
confidence: 99%