Inscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelength

Sugimoto, Kozo; Matsuo, Shigeki; Naoi, Yoshiki

doi:10.1038/s41598-020-78564-z

Cited by 7 publications

(4 citation statements)

References 32 publications

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“…[27] in the two‐photon absorption regime (at 1.55‐µm wavelength) was recently transposed to the linear absorption regime (at 1.06‐µm wavelength) in thin silicon wafers (300‐µm thickness). [ 185 ]…”

Section: Solutions For Laser Direct Writing In Siliconmentioning

confidence: 99%

In‐Volume Laser Direct Writing of Silicon—Challenges and Opportunities

Chambonneau

Grojo

Tokel

et al. 2021

Laser & Photonics Reviews

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Laser direct writing is a widely employed technique for 3D, contactless, and fast functionalization of dielectrics. Its success mainly originates from the utilization of ultrashort laser pulses, offering an incomparable degree of control on the produced material modifications. However, challenges remain for devising an equivalent technique in crystalline silicon which is the backbone material of the semiconductor industry. The physical mechanisms inhibiting sufficient energy deposition inside silicon with femtosecond laser pulses are reviewed in this article as well as the strategies established so far for bypassing these limitations. These solutions consisting of employing longer pulses (in the picosecond and nanosecond regime), femtosecond‐pulse trains, and surface‐seeded bulk modifications have allowed addressing numerous applications.

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Section: Solutions For Laser Direct Writing In Siliconmentioning

confidence: 99%

In‐Volume Laser Direct Writing of Silicon—Challenges and Opportunities

Chambonneau

Grojo

Tokel

et al. 2021

Laser & Photonics Reviews

View full text Add to dashboard Cite

show abstract

“…1 . The objective of each grating production system is to realize sensible parameter values (Sugimoto et al 2020 ). As a result, high-performance gratings are a prerequisite for high-performance MEMS based spectrometers, and they can be produced with the help of MEMS manufacturing technologies (Pinhas and Hava 2003 ; Mosca and Targia 2001 ).…”

Section: Grating In Uv/vis Spectrometermentioning

confidence: 99%

InGaAs based gratings for UV–VIS spectrometer in prospective mRNA vaccine research

Ravindran

Nirmal

et al. 2022

Opt Quant Electron

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During the outbreak of the COVID-19 illness, mRNA (messenger RNA) injections proved to be effective vaccination. Among the presently available analytical techniques, UV/VIS spectrophotometry is a trustworthy and practical instrument that may provide information on the chemical components of the vaccine at the molecular level. In this paper, we will present a one-dimensional grating of InGaAs as a prospect grating structure for UV–VIS spectrometer that can be used for mRNA vaccine development. The main parameters and the wavelength region used in mRNA vaccine development lies in the range of 200 nm to 700 nm (UV–VIS Range). The incorporation of new materials that are excellent for cutting-edge semiconductor industry procedures for MEMS manufacture, as well as new optimal parameters, will improve the grating and spectrometer’s performance which will enhance the mRNA vaccine development and manufacturing workflows enabled by UV–VIS spectroscopy. Hence we evaluated the feasibility of the materials, Si (Silicon), GaN (Gallium Nitride), InGaAs (Indium Gallium Arsenide) and InP (Indium Phosphide) as a grating material. Reflection spectrum of the proposed structure shows 48% increase compared to the grating made up of Silicon. In order to model wave propagation in one grating unit cell, electromagnetic waves frequency domain interface is used. The periodic constraints of floquet periodicity are used for simulation at both faces of the unit cell. The reflectance of grating with each material as functions of the angle of incidence was plotted. Also we evaluated the effect of grating thickness, groove density, spectral resolution and efficiency over different materials namely Si, GaN, InGaAs and InP. After optimizing geometric parameters, the designed InGaAs based grating achieved a efficiency of 87.45% and can be a reliable prospect for mRNA based vaccine development.

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“…This strategy can rely on the use of ultrashort pulses exhibiting a limited contrast [6], THz burst mode irradiation approaches [7,8], and/or the direct use of picosecond [9,10] or nanosecond pulses [11,12,13,14]. These approaches have been studied and exploited during the last years to make important technological demonstrations including the direct writing of waveguides [14,15,16] and other optical functionalities [13,17,18], stealth dicing [11,12,8], transmission laser welding [19,20], and the fabrication of various 3D structures by laser-assisted etching methods [13,21].…”

Section: Introductionmentioning

confidence: 99%

Ultra-high-aspect-ratio structures through silicon using infrared laser pulses focused with axicon-lens doublets

Ganguly,

Sopeña,

Grojo

2024

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We describe how a direct combination of an axicon and a lens can represent a simple and efficient beamshaping solution for laser material processing applications. We produce high-angle pseudo-Bessel micro-beams at 1550 nm, which would be difficult to produce by other methods. Combined with appropriate stretching of femtosecond pulses, we access optimized conditions inside semiconductors allowing us to develop high-aspectratio refractive-index writing methods. Using ultrafast microscopy techniques, we characterize the delivered local intensities and the triggered ionization dynamics inside silicon with 200-fs and 50-ps pulses. While similar plasma densities are produced in both cases, we show that repeated picosecond irradiation induces permanent modifications spontaneously growing shot-after-shot in the direction of the laser beam from front-surface damage to the back side of irradiated silicon wafers. The conditions for direct microexplosion and microchannel drilling similar to those today demonstrated for dielectrics still remain inaccessible. Nonetheless, this work evidences higher energy densities than those previously achieved in semiconductors and a novel percussion writing modality to create structures in silicon with aspect ratios exceeding ∼700 without any motion of the beam. The estimated transient change of conductivity and measured ionization fronts at near luminal speed along the observed microplasma channels support the vision of vertical electrical connections optically controllable at GHz repetition rates. The permanent silicon modifications obtained by percussion writing are light-guiding structures according to a measured positive refractive index change exceeding 10 −2 . These findings open the door to unique monolithic solutions for electrical and optical through-silicon-vias which are key elements for vertical interconnections in 3D chip stacks.

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Inscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelength

Cited by 7 publications

References 32 publications

In‐Volume Laser Direct Writing of Silicon—Challenges and Opportunities

In‐Volume Laser Direct Writing of Silicon—Challenges and Opportunities

InGaAs based gratings for UV–VIS spectrometer in prospective mRNA vaccine research

Ultra-high-aspect-ratio structures through silicon using infrared laser pulses focused with axicon-lens doublets

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