1981
DOI: 10.1088/0022-3735/14/4/005
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Input protection of low-current DC amplifiers by GaAsP diodes

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Cited by 11 publications
(3 citation statements)
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“…This could be due to nonlinearities in the I -V characteristics which have been reported by Sah et al (1957). It may be noted that I 0 of general silicon diodes is of the order of nano amperes and the measured I 0 of GaAs devices is 5-6 orders lower than the silicon diode (Damljanovic and Arandjelovic 1981).…”
Section: I-v Characteristics Of Ledsmentioning
confidence: 72%
See 1 more Smart Citation
“…This could be due to nonlinearities in the I -V characteristics which have been reported by Sah et al (1957). It may be noted that I 0 of general silicon diodes is of the order of nano amperes and the measured I 0 of GaAs devices is 5-6 orders lower than the silicon diode (Damljanovic and Arandjelovic 1981).…”
Section: I-v Characteristics Of Ledsmentioning
confidence: 72%
“…From the band gap difference between silicon and GaAs devices, the I 0 of GaAs devices should be 6-7 orders of magnitude lower than that of silicon. Damljanovic and Arandjelovic (1981) have shown that I 0 is of the order of 10 −20 A for some LEDs. This significant property of the material of LED makes it suitable as a nonlinear element of log amplifier for low current applications.…”
Section: Theoretical Backgroundmentioning
confidence: 99%
“…It is estimated that the reverse saturation current of the green LED is of the order of 10 20 A (Damljanovic and Arandjelovic 1981). Moreover, LEDs are commercially available at very low cost as compared with to low leakage diodes or transistors.…”
Section: Introductionmentioning
confidence: 99%