“…Various studies revealed the leading incentives and expansion of this technology which can induce momentous impacts on system modeling and assemblage, prompting paragon transitions within the entire power electronics industry [9,10]. The two predominantly engaged semiconductor materials are silicon carbide (SiC) and gallium nitride (GaN), which surpass their silicon (Si) counterpart by acquiring substantial intrinsic properties, making it feasible to intensify the switching frequency of converters from a few hundred kHz to the MHz frequency region [11,12]. However, optimization always comes with a cost; with every advance-Energies 2021, 14, 3866 2 of 16 ment, researchers and analysts are confronted with challenges and impediments to realize upgraded power converter designs.…”