Input Bandwidth of Hot Electron Bolometer With Spiral Antenna

Shurakov, Alexander; Seliverstov, S. V.; Kaurova, N.; Finkel, Matvey; Voronov, B.; Gol'Tsman, G.

doi:10.1109/tthz.2012.2194852

Cited by 19 publications

(11 citation statements)

References 11 publications

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“…The energy bandgap in NbN is 4.5 meV [36], which corresponds to a frequency of 1.15 THz. However, as it was shown experimentally in [33], the spectral responsivity of our bolometer is the highest in the range 1-2.5 THz. So, the spectral range of THz photons incident on the bolometer in our set-up hits the range of its maximal responsivity.…”

Section: Methodssupporting

confidence: 70%

“…Here 33 is the crystal nonlinear coefficient, L is its length, ∆ω i , ∆Ω i , and S are the spectral band, a solid angle, and an input area of the detection system, correspondingly. Planck's factor N T = [exp( ω i /k B T) − 1] −1 accounts thermal field fluctuations at the crystal temperature T. Frequencies of quantum-correlated THz (ω i ) and optical (ω s ) photons are related with the pump frequency ω p via the energy conversation law, ω s + ω i = ω p ; n p , n s , n i are the crystal refractive indexes at corresponding frequencies, θ s0 , θ i0 are the propagation angles of optical and THz photons generated under exact phase-matching condition.…”

Section: Resultsmentioning

confidence: 99%

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Towards Measuring Terahertz Photon Statistics by a Superconducting Bolometer

Prudkovskii

Leontyev

Кузнецов

et al. 2021

Sensors

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Statistical distributions of the analog readings of an antenna-coupled THz superconducting bolometer were measured and analyzed under a special type of irradiation by low-energy fluxes of THz photons with Poisson photon statistics and controllable mean photon numbers. The photons were generated via low-gain parametric down-conversion in pulse-pumped Mg:LiNbO3 crystal placed to a cooled cryostat together with the bolometer NbN film. Results of theoretical approximation of experimental histograms reveal the discrete nature of THz detection by superconducting bolometers and open a way for studying their quantum characteristics. It is shown that bolometer readings per pulse consist of discrete counts (“single charges”), with the mean number linearly dependent on the number of input photons. Contributions of single counts to a total analog reading are statistically distributed according to the normal law, with average values slightly depending on the number of counts in each reading. A general formula is proposed to describe the relationship between continuous statistical distribution of the bolometer readings and discrete quantum statistics of the incident photons.

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Section: Methodssupporting

confidence: 70%

Section: Resultsmentioning

confidence: 99%

Towards Measuring Terahertz Photon Statistics by a Superconducting Bolometer

Prudkovskii

Leontyev

Кузнецов

et al. 2021

Sensors

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“…Further details of the antenna parameters and its broadband characteristics are presented in Ref. [33]. We note here that the contact to the drain is intentionally made thin and closely adjacent to the gate sleeve.…”

mentioning

confidence: 99%

Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors

Bandurin

Gayduchenko

Cao

et al. 2018

Applied Physics Letters

103

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Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to graphene ′ s superior electron mobility. Previously it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage and therefore it was found to be difficult to disentangle these contributions in the previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs.Over the last decade, graphene has attracted a considerable attention in the fields of photonics 1 , plasmonics 2 , and optoelectronics 3 . The interest is motivated by graphenes unique gate-tuneable physical properties that allow realization of radiation detectors operating in a wide range of frequencies 4-7 .Electromagnetic radiation in the terahertz (THz) range deserves a special attention as it allows fast and non-destructive imaging of objects with a strong potential in medical and security sectors 8 . With this potential, the development of efficient THz generators and sensitive detectors is an important technological problem.Recently, it has been shown that graphene field-effect transistors (FETs) can act as THz detectors exhibiting a dc photoresponse to impinging radiation 7,[9][10][11][12][13][14][15][16] . A broadband photodetection in the sub-THz range with the responsivity reaching tens of V/W and noise equivalent power of hundreds of pW/Hz 1/2 has been demonstrated in graphene FETs designed in the configuration where the incoming radiation is coupled between the source and the gate terminals 9,10,14,15 . In this configuration, the photoresponse is usually attributed to the so-called Dyakonov-Shur (DS) rectification arising as a result of the plasma waves excitation in the FET channel 17,18 . However, other effects can also impact the photoresponse. For instance, photo-thermoelectric effect (PTE) arising from the temperature gradient in a FET can provide an additional rectification of the incoming high-frequency signal 5,7 . As we show below, both PTE and DS effects exhibit similar functional dependence on the gate voltage and result in the same sign of the photoresponse, that makes it challenging to point to the origin of the observed rectification. Further improvement of graphene-based THz photodetectors requires a deeper understanding of the rectification mechanisms governing the photoresponse.In this work, we analyze the sub-THz photoresponse of graphene-based FET by comparing its responsivity at liquid nitrogen and room temperatures. Such temperaturedependent measurements allowed us to point ...

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“…The chosen length-to-width ratio of the sensitive area provides an acceptable RF coupling between the bolometer and the planar antenna. The antenna is a logarithmic spiral [5] antenna. Fig.…”

Section: Detector and Experimental Setupmentioning

confidence: 99%

Fast and Sensitive Terahertz Direct Detector Based on Superconducting Antenna-Coupled Hot Electron Bolometer

Seliverstov

Maslennikov

Ryabchun

et al. 2014

IEEE Trans. Appl. Supercond.

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We characterize superconducting antenna-coupled hot-electron bolometers for direct detection of terahertz radiation operating at a temperature of 9.0 K. The estimated value of responsivity obtained from lumped-element theory is strongly different from the measured one. A numerical calculation of the detector responsivity is developed, using the Euler method, applied to the system of heat balance equations written in recurrent form. This distributed element model takes into account the effect of nonuniform heating of the detector along its length and provides results that are in better agreement with the experiment. At a signal frequency of 2.5 THz, the measured value of the optical detector noise equivalent power is 2.0×10 -13 W·Hz -0.5 . The value of the bolometer time constant is 35 ps. The corresponding energy resolution is about 3 aJ. This detector has a sensitivity similar to that of the state-of-the-art sub-millimeter detectors operating at accessible cryogenic temperatures, but with a response time several orders of magnitude shorter.  Index Terms-Radiation detectors, hot electron bolometer, frequency response.

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Input Bandwidth of Hot Electron Bolometer With Spiral Antenna

Cited by 19 publications

References 11 publications

Towards Measuring Terahertz Photon Statistics by a Superconducting Bolometer

Towards Measuring Terahertz Photon Statistics by a Superconducting Bolometer

Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors

Fast and Sensitive Terahertz Direct Detector Based on Superconducting Antenna-Coupled Hot Electron Bolometer

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