InP/ZnSeS/ZnS Core–Shell Quantum Dots as Novel Saturable Absorbers in Mode‐Locked Fiber Lasers

Lou, Yajun; He, Pengfei; Ge, Boyuan; Duan, Xijian; Hu, Lei; Zhang, Xiaoli; Tao, Lili; Zhang, Xinhai

doi:10.1002/adom.202201939

Cited by 7 publications

(3 citation statements)

References 54 publications

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“…The InP/ZnSeS/ZnS quantum dots fabricated in the presence of hydrogen fluoride can be used to reduce defects which leads to a reduction of the carrier recovery time. The pulse width of the laser is shortened from 635 fs to 450 fs by using InP/ZnSeS/ZnS quantum dots (Lou et al, 2022).…”

Section: Practical Applications Of All-optical Switching Devicesmentioning

confidence: 99%

Optical non-linearities and applications of ZnS phosphors

Chauhan,

Sharma,

Singh

et al. 2024

Adv. Opt. Technol.

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Optical non-linearities play a crucial role in enabling efficient and ultrafast switching applications that are essential for next-generation photonic devices. ZnS phosphor material produces the best results in terms of increased luminescence quantum yield when doped with certain impurities. Nevertheless, the investigation of the third-order non-linear optical susceptibility of the phosphor materials can be exploited for various switching applications. In this regard, we review the recent advancements in the investigation of non-linear optical properties of ZnS phosphors, where the knowledge of absorption and refraction is utilized in various optical and detector applications. Furthermore, the review highlights strategies employed to enhance the non-linear optical response of phosphor materials as well as a general discussion of an attosecond optical switching scheme which can be used to fabricate devices with petahertz speeds. Consequently, we provide a solution to the unsolved problem of the significant extension of optical limiting applications to switching applications by developing design strategies to manipulate conventional ZnS phosphor material. The potential challenges and future prospects of utilizing phosphor materials for switching applications are also addressed. The strategies for manipulating ZnS phosphor can be generalized for a broad range of other materials by minimizing linear and non-linear losses, while enhancing the values of the non-linear refractive index coefficient. We propose that the figure-of-merit of ZnS material can be enhanced by using a suitable combination of pump and probe wavelength values, which can be useful for optical switching applications.

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Section: Practical Applications Of All-optical Switching Devicesmentioning

confidence: 99%

Optical non-linearities and applications of ZnS phosphors

Chauhan,

Sharma,

Singh

et al. 2024

Adv. Opt. Technol.

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“…At present, donor–acceptor pair (DAP) recombination (as shown in Figure 2 ) is the most recognized emission method of I-III-VI QDs, such as the transition from V S to V Cu or from In Cu to V Cu , in which the In Cu or V S acts as the donor and V Cu acts as the acceptor [ 47 ]. In addition, the transition from the bottom of the conduction band to the acceptor near the valence band [ 15 , 46 ] and the radiation recombination mode related to the surface defect state [ 48 , 49 ] have also been proposed. A large number of studies have shown that type I vacancy has an important impact on the luminescent properties of I-III-VI QDs.…”

Section: Properties Of Multiple Quantum Dotsmentioning

confidence: 99%

A Review on Multiple I-III-VI Quantum Dots: Preparation and Enhanced Luminescence Properties

Chen

et al. 2023

Materials

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I-III-VI type QDs have unique optoelectronic properties such as low toxicity, tunable bandgaps, large Stokes shifts and a long photoluminescence lifetime, and their emission range can be continuously tuned in the visible to near-infrared light region by changing their chemical composition. Moreover, they can avoid the use of heavy metal elements such as Cd, Hg and Pb and highly toxic anions, i.e., Se, Te, P and As. These advantages make them promising candidates to replace traditional binary QDs in applications such as light-emitting diodes, solar cells, photodetectors, bioimaging fields, etc. Compared with binary QDs, multiple QDs contain many different types of metal ions. Therefore, the problem of different reaction rates between the metal ions arises, causing more defects inside the crystal and poor fluorescence properties of QDs, which can be effectively improved by doping metal ions (Zn2+, Mn2+ and Cu+) or surface coating. In this review, the luminous mechanism of I-III-VI type QDs based on their structure and composition is introduced. Meanwhile, we focus on the various synthesis methods and improvement strategies like metal ion doping and surface coating from recent years. The primary applications in the field of optoelectronics are also summarized. Finally, a perspective on the challenges and future perspectives of I-III-VI type QDs is proposed as well.

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“…Currently, the interest in one-pot colloidal methods is greater due to their simplicity, better reproducibility, and faster reactions. However, for almost all of the QDs created with these methods (even the highly luminescent QDs), their PL signals are located at wavelengths ≤620 nm or their fwhm is ≥50 nm, ,,,,− which both reduce the required red color purity for high-performance devices. As mentioned previously, this challenge is more dominant for far-red emissions at longer wavelengths, typically >640 nm.…”

Section: Introductionmentioning

confidence: 99%

Tuning the Shades of Red Emission in InP/ZnSe/ZnS Nanocrystals with Narrow Full Width for Fabrication of Light-Emitting Diodes

Soheyli,

Biçer,

Ozel

et al. 2023

ACS Omega

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While Cd-based luminescent nanocrystals (NCs) are the most mature NCs for fabricating efficient red light-emitting diodes (LEDs), their toxicity related limitation is inevitable, making it necessary to find a promising alternative. From this point of view, multishell-coated, red-emissive InP-based NCs are excellent luminescent nanomaterials for use as an emissive layer in electroluminescent (EL) devices. However, due to the presence of oxidation states, they suffer from a wide emission spectrum, which limits their performance. This study uses tris(dimethylamino)phosphine (3DMA-P) as a low-cost aminophosphine precursor and a double HF treatment to suggest an upscaled, cost-effective, and one-pot hot-injection synthesis of purely red-emissive InP-based NCs. The InP core structures were coated with thick layers of ZnSe and ZnS shells to prevent charge delocalization and to create a narrow size distribution. The purified NCs showed an intense emission signal as narrow as 43 nm across the entire red wavelength range (626–670 nm) with an emission quantum efficiency of 74% at 632 nm. The purified samples also showed an emission quantum efficiency of 60% for far-red wavelengths of 670 nm with a narrow full width of 50 nm. The samples showed a relatively long average emission lifetime of 50–70 ns with a biexponential decay profile. To demonstrate the practical ability of the prepared NCs in optoelectronics, we fabricated a red-emissive InP-based LEDs. The best-performing device showed an external quantum efficiency (EQE) of 1.16%, a luminance of 1039 cd m–2, and a current efficiency of 0.88 cd A–1.

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InP/ZnSeS/ZnS Core–Shell Quantum Dots as Novel Saturable Absorbers in Mode‐Locked Fiber Lasers

Cited by 7 publications

References 54 publications

Optical non-linearities and applications of ZnS phosphors

Optical non-linearities and applications of ZnS phosphors

A Review on Multiple I-III-VI Quantum Dots: Preparation and Enhanced Luminescence Properties

Tuning the Shades of Red Emission in InP/ZnSe/ZnS Nanocrystals with Narrow Full Width for Fabrication of Light-Emitting Diodes

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