InP quantum dots embedded in GaP: Optical properties and carrier dynamics

Hatami, Fariba; Masselink, W. T.; Schrottke, L.; Tomm, Jens W.; Talalaev, V. G.; Kristukat, C.; Goñi, A. R.

doi:10.1103/physrevb.67.085306

Cited by 55 publications

(48 citation statements)

References 26 publications

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“…The synthesis procedure has been described in detail in previous papers [19][20][21][22][23][24]. The lattice mismatch of 3.8% between InP and In 0.48 Ga 0.52 P (lattice matched to GaAs) drives the strain-induced formation of QDs via the Stranski-Krastanow mechanism.…”

Section: Synthesis and Morphological Characterizationmentioning

confidence: 99%

Chemical Sensitivity of Luminescent Epitaxial Surface InP Quantum Dots

Angelis¹,

Casalboni²,

Colantoni³

et al. 2013

JST

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Surface InP quantum dots grown by gas source molecular beam epitaxy on In 0.48 Ga 0.52 P buffer layer lattice matched to GaAs substrate shows a broad-band near-infrared photoluminescence ranging from 750 to 865 nm dependent on their dimensions. A reversible luminescence intensity enhancement has been observed when the quantum dots were exposed to vapours of different chemical solvents with the highest sensitivity for alcohol (methanol and ethanol) vapours. The luminescent behaviour is dependent on the solvent type and concentration. The peak energy and band shape of the luminescence are not affected by the solvent vapour.

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Section: Synthesis and Morphological Characterizationmentioning

confidence: 99%

Chemical Sensitivity of Luminescent Epitaxial Surface InP Quantum Dots

Angelis¹,

Casalboni²,

Colantoni³

et al. 2013

JST

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“…Until recently, epitaxial quantum dots were made mostly by a growth protocol ("Stranski-Krastanov", or SK) 3,4,12 requiring that the dot material have a significantly different lattice constant (generally larger) than the substrate on which it is grown, e.g., InAs-on-GaAs 4 or InP-on-GaP 12 . Lattice-matched material pairs such as GaAs on AlGaAs or InAs on GaSb were excluded until recently.…”

mentioning

confidence: 99%

Geometry of epitaxial GaAs/(Al,Ga)As quantum dots as seen by excitonic spectroscopy

Luo

Zunger

2011

Phys. Rev. B

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It is shown that exciton and multi-exciton emission lines ("spectral barcode") of a quantum dot conceal nontrivial structural information on the shape and size of the dot, information which can be uncovered by comparison with atomistic many-body theory. Application to the newly-established strain-free GaAs quantum dots grown via "droplet epitaxy" onto AlGaAs matrix reveal the shape and size as "seen" by spectroscopy. The results show that the previously determined dot height (∼ 14 nm) as "seen" by cross-sectional scanning tunneling microscopy (XSTM) could not possibly be consistent with the excitonic signature (1.7-1.9 eV), as the latter must reflect a 1-4 nm tall dot. Multi-exciton "barcode" and fine structure spitting suggest GaAs/AlGaAs dots are in Gaussianshape in agreement with XSTM measurement. Both spectroscopy and XSTM measurements were done on GaAs dots capped by the Al0.3Ga0.7As barrier layer. The fact that XSTM sees tall dots and spectroscopy sees short dots is thus not because the dot change its height in one experiment relative to the other, but because different dots must have been used. This was uncovered by theoretical simulation of the experiment showing that the two experiments could not possibly correspond to the same dot.

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“…In fact, a similar temperaturedependent behaviour of the emission has been reported for ensembles of isolated InGaAs/GaAs quantum dots [4]. This was taken as evidence of a peculiar dynamics of photogenerated carriers into the dots but only studies at ambient pressure were available [4,5].…”

Section: Introductionmentioning

confidence: 60%

Recombination dynamics in self‐assembled InP/GaP quantum dots under high pressure

Kristukat

Dworzak

Gonñi

et al. 2004

Physica Status Solidi (b)

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We have investigated the recombination dynamics in self-assembled InP/GaP quantum dots by means of time-resolved photoluminescence measured at low temperatures between 2 and 100 K and high hydrostatic pressure up to 2 GPa. Due to the high-power levels for pulsed excitation, the quantum dot emission exhibits two components with typical decay times of 5 and 30 ns, corresponding to direct Γ -Γ and X -Γ interband recombination processes, respectively. These decay times appear to be independent of pressure. At a very low pressure of about 0.1 GPa the intensity of the dot emission drops abruptly relative to that of the wetting layer indicating a switching off of a carrier relaxation channel.

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InP quantum dots embedded in GaP: Optical properties and carrier dynamics

Cited by 55 publications

References 26 publications

Chemical Sensitivity of Luminescent Epitaxial Surface InP Quantum Dots

Chemical Sensitivity of Luminescent Epitaxial Surface InP Quantum Dots

Geometry of epitaxial GaAs/(Al,Ga)As quantum dots as seen by excitonic spectroscopy

Recombination dynamics in self‐assembled InP/GaP quantum dots under high pressure

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