InP HEMTs for Sub-mW Cryogenic Low-Noise Amplifiers

Cha, Eunjung; Wadefalk, Niklas; Moschetti, Giuseppe; Pourkabirian, Arsalan; Stenarson, J.; Grahn, Jan

doi:10.1109/led.2020.3000071

Cited by 55 publications

(38 citation statements)

References 28 publications

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“…This technology has been already space qualified for HIFI/Herschel [102]. Further development was needed to demonstrate good performance at reduced power as shown by [103] or more recently by [104], achieving an ultra-low power dissipation of 112 µW. Other amplifiers are based on metamorphic GaAs HEMTs [86,105].…”

Section: Intermediate Frequency Cryogenic Low Noise Amplifiersmentioning

confidence: 99%

The science case and challenges of space-borne sub-millimeter interferometry

Gurvits,

Paragi,

Amils

et al. 2022

Preprint

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Ultra-high angular resolution in astronomy has always been an important vehicle for making fundamental discoveries. Recent results in direct imaging of the vicinity of the supermassive black hole in the nucleus of the radio galaxy M87 by the millimeter VLBI system Event Horizon Telescope and various pioneering results of the Space VLBI mission RadioAstron provided new momentum in high angular resolution astrophysics. In both mentioned cases, the angular resolution reached the values of about 10−20 microrcseconds (0.05−0.1 nanoradian). Further developments toward at least an order of magnitude "sharper" values, at the level of 1 microarcsecond are dictated by the needs of advanced astrophysical studies. The paper emphasis that these higher values can only be achieved by placing millimeter and submillimeter wavelength interferometric systems in space. A concept of such the system, called Terahertz Exploration and Zooming-in for Astrophysics, has been proposed in the framework of the ESA Call for White Papers for the Voayage 2050 long term plan in 2019. In the current paper we present new science objectives for such the concept based on recent results in studies of active galactic nuclei and supermassive black holes. We also discuss several approaches for addressing technological challenges of creating a millimeter/sub-millimeter wavelength interferometric system in space. In particular, we consider a novel configuration of a space-borne millimeter/sub-millimeter antenna which might resolve several bottlenecks in creating large precise mechanical structures. The paper also presents an overview of prospective spacequalified technologies of low-noise analogue front-end instrumentation for millimeter/sub-millimeter telescopes. Data handling and processing instrumentation is another key technological component of a sub-millimeter Space VLBI system. Requirements and possible implementation options for this instrumentation are described as an extrapolation of the current state-of-the-art Earthbased VLBI data transport and processing instrumentation. The paper also briefly discusses approaches to the interferometric baseline state vector determination and synchronisation and heterodyning system. The technology-oriented sections of the paper do not aim at presenting a complete set of technological solutions for sub-millimeter (terahertz) space-borne interferometers. Rather, in combination with the original ESA Voyage 2050 White Paper, it sharpens the case for the next generation microarcsceond-level imaging instruments and provides starting points for further in-depth technology trade-off studies.

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Section: Intermediate Frequency Cryogenic Low Noise Amplifiersmentioning

confidence: 99%

The science case and challenges of space-borne sub-millimeter interferometry

Gurvits,

Paragi,

Amils

et al. 2022

Preprint

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“…T HE InP high electron mobility transistor (InP HEMT) is the workhorse device for the design of the cryogenic low noise amplifier (LNA) which offers the lowest noise temperature among all semiconductor-based circuits [1]. Applications are found in microwave and mm-wave receivers for radio astronomy and space communication [2]. At present, there is a rapid development of electronic devices used in quantum computing systems [3].…”

Section: Introductionmentioning

confidence: 99%

Influence of Spacer Thickness on the Noise Performance in InP HEMTs for Cryogenic LNAs

Pourkabirian²,

Bergsten³

et al. 2022

IEEE Electron Device Lett.

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InP high electron mobility transistors (InP HEMTs) with different spacer thickness 1 to 7 nm in the InAlAs-InGaAs heterostructure have been fabricated and characterized at 5 K with respect to electrical dc and rf properties. The InP HEMT noise performance was extracted from gain and noise measurements of a hybrid low-noise amplifier (LNA) at 5 K equipped with discrete transistors. When biased for optimal noise operation, the LNA using 5 nm spacer thickness InP HEMTs achieved the lowest average noise temperature of 1.4 K at 4-8 GHz. The InP HEMT channel noise was estimated from the drain noise temperature which confirmed the minimum in noise temperature for the 5 nm spacer thickness InP HEMT. It is suggested that the spacer thickness acts to control the degree of real-space transfer of electrons from the channel to the barrier responsible for the observed noise variation in the cryogenic InP HEMTs.

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“…High-electron-mobility transistors (HEMTs) have long been the transistor of choice for extremely low-noise amplifiers (LNAs) operating in microwave and millimeter wave bands due to their superior noise and gain performance [1]. Cryogenic LNAs based on state-of-the-art InGaAs/InP HEMTs provide outstanding performance thanks to ultra-high carrier mobility and velocity [2,3]. Important applications range from cryogenic read out circuits for quantum computing [4] to surveillance [5] and radio astronomy [6].…”

Section: Introductionmentioning

confidence: 99%

Low-Field Mobility and High-Field Velocity of Charge Carriers in InGaAs/InP High-Electron-Mobility Transistors

Rodrigues

Vorobiev

2022

IEEE Trans. Electron Devices

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Development of transistors for advanced low noise amplifiers requires better understanding of mechanisms governing the charge carrier transport in correlation with the noise performance. In this paper, we report on study of the carrier velocity in InGaAs/InP high-electron-mobility transistors (HEMTs) found via geometrical magnetoresistance in the wide range of the drain fields, up to 2 kV/cm, at cryogenic temperature of 2 K. We observed, for the first time experimentally, the velocity peaks and found that the peak velocity and corresponding field decrease significantly with the transverse field. The low-field mobility and peak velocity are found to be up to 65000 cm 2 /Vs and 1.2×10 6 cm/s, respectively. Extrapolations to the lower transverse fields show that the peak velocity can be as high as 2.7×10 7 cm/s. The corresponding intrinsic transit frequency can be up to 172 GHz at the gate length of 250 nm. We demonstrated, for the first time, that the low-field mobility and peak velocity reveal opposite dependencies on the transverse field, indicating the difference in carrier transport mechanisms dominating at low-and high-fields. Therefore, the peak velocity is an appropriate parameter for characterization and development of the low noise HEMTs, complementary to the low-field mobility. Analysis indicates that the low-field carrier transport is governed by screening of the Coulomb potential of ionized impurities responsible for the carrier scattering. The velocity overshoot is associated with the electron quantization and subband formation caused by the transverse field. The results of the research clarify the ways of the further development of the HEMTs for advanced applications.

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InP HEMTs for Sub-mW Cryogenic Low-Noise Amplifiers

Cited by 55 publications

References 28 publications

The science case and challenges of space-borne sub-millimeter interferometry

The science case and challenges of space-borne sub-millimeter interferometry

Influence of Spacer Thickness on the Noise Performance in InP HEMTs for Cryogenic LNAs

Low-Field Mobility and High-Field Velocity of Charge Carriers in InGaAs/InP High-Electron-Mobility Transistors

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