InP HBT Technologies for THz Integrated Circuits

Urteaga, M.; Griffith, Z.; Seo, Munkyo; Hacker, J.B.; Rodwell, M.J.W.

doi:10.1109/jproc.2017.2692178

Cited by 206 publications

(95 citation statements)

References 65 publications

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“…[4][5][6][7] Operating frequency of oscillators with electron devices has also been rapidly increasing from the millimeter wave side. [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] Among the electron devices, resonant tunneling diodes (RTDs) have been considered as one of the candidates for compact THz oscillators at room temperature. [16][17][18][19][20][21][22][23] Oscillations up to 1.98 THz 23 and relatively high output power in the sub-THz region 24 have been reported for these oscillators.…”

Section: Introductionmentioning

confidence: 99%

Measurements of temperature characteristics and estimation of terahertz negative differential conductance in resonant-tunneling-diode oscillators

2017

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The temperature dependences of output power, oscillation frequency, and current-voltage curve are measured for resonant-tunneling-diode terahertz (THz) oscillators. The output power largely changes with temperature owing to the change in Ohmic loss. In contrast to the output power, the oscillation frequency and current-voltage curve are almost insensitive to temperature. The measured temperature dependence of output power is compared with the theoretical calculation including the negative differential conductance (NDC) as a fitting parameter assumed to be independent of temperature. Very good agreement was obtained between the measurement and calculation, and the NDC in the THz frequency region is estimated. The results show that the absolute values of NDC in the THz region significantly decrease relative to that at DC, and increases with increasing frequency in the measured frequency range.

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Section: Introductionmentioning

confidence: 99%

Measurements of temperature characteristics and estimation of terahertz negative differential conductance in resonant-tunneling-diode oscillators

2017

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“…Owing to the high frequency capabilities and moderate breakdown voltage, InP DHBTs have revealed well suited for mm‐wave PA implementations. In highly scaled processes, frequencies of operation can reach even the terahertz range . The InP DHBT technology employed in this design and developed at III‐V Lab is tailored for high‐speed mixed‐signal applications .…”

Section: Inp Dhbt Technologymentioning

confidence: 99%

“…In highly scaled processes, frequencies of operation can reach even the terahertz range. 8 The InP DHBT technology employed in this design and developed at III-V Lab is tailored for high-speed mixedsignal applications. 9 For the stacked-transistor power cells, 4-finger devices with total active area of 4 × 0.7 × 10 μm 2 have been used.…”

Section: Inp Dhbt Technologymentioning

confidence: 99%

E‐band Indium Phosphide double heterojunction bipolar transistor monolithic microwave‐integrated circuit power amplifier based on stacked transistors

Squartecchia

Johansen

Dupuy

et al. 2018

Micro & Optical Tech Letters

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A monolithic microwave‐integrated circuit 2‐stage power amplifier (PA) realized in indium phosphide double heterojunction bipolar transistor technology is presented in this article. The 2‐ and 3‐stacked transistors are used in the driver and power stages, respectively. As a mean to increase the output power capabilities, 2‐ and 4‐way corporate power combiners are implemented in coplanar waveguide technology. The fabricated PA exhibits a small‐signal gain of 13.6 dB at 77 GHz and a 3‐dB bandwidth ranging from 74 to 86 GHz. At 78 GHz, the saturated output power is >19.6 dBm.

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“…It also makes CPW and CPS versatile for designing components and chips based on different substrates and packaging them into a system. In communication systems, CPW in a ground-signal-ground (GSG) configuration is normally used for designing amplifiers [2][3][4][5], frequency doublers [6,7], mixers [8,9], power DACs (PDACs) [10,11] and interposer connections between different components [12,13]. Being different from CPW, CPS as well as ACPS are in a ground-signal (GS) configuration and they are used for designing baluns [14][15][16][17], antennas [18][19][20], and the electrodes of Mach-Zehnder modulators (MZMs) [21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Ultra-wideband coplanar waveguide-to-asymmetric coplanar stripline transition from DC to 165 GHz

Dong

Johansen

Zhurbenko

2018

Int. J. Microw. Wireless Technol.

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This paper presents an ultra-wideband coplanar waveguide (CPW)-to-asymmetric coplanar stripline (ACPS) transition based on aluminum nitride (AlN) substrate. The concepts of designing CPW, ACPS, and CPW-to-ACPS transition are explained. In order to suppress parasitic modes, vias going through AlN substrate are added along the ground traces. The signal trace is tapered out and chamfered to reduce the reflection caused by the termination of ground trace. The CPW-to-ACPS transition is designed, fabricated, and measured in a back-to-back configuration. The fabricated CPW-to-ACPS transition can provide a bandwidth of 165 GHz with an associated insertion loss of 3 dB.

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InP HBT Technologies for THz Integrated Circuits

Cited by 206 publications

References 65 publications

Measurements of temperature characteristics and estimation of terahertz negative differential conductance in resonant-tunneling-diode oscillators

Measurements of temperature characteristics and estimation of terahertz negative differential conductance in resonant-tunneling-diode oscillators

E‐band Indium Phosphide double heterojunction bipolar transistor monolithic microwave‐integrated circuit power amplifier based on stacked transistors

Ultra-wideband coplanar waveguide-to-asymmetric coplanar stripline transition from DC to 165 GHz

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