InP HBT integrated circuit technology with selectively implanted subcollector and regrown device layers

Sokolich, M.; Chen, M.Y.; Chow, D. H.; Royter, Y.; Thomas, S.; Fields, C.H.; Hitko, D.A.; Shi, Binqiang; Montes, M.; Bui, S.; Boegeman, Y.K.; Arthur, A.; Duvall, J.; Martinez, R.; Hussain, T.; Rajavel, R. D.; Li, J.C.; Elliott, K.; Thompson, J. D.

doi:10.1109/gaas.2003.1252398

Cited by 7 publications

(2 citation statements)

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“…All layers were grown lattice-matched on semi-insulating InP substrates and the p-type and n-type dopants were Be and Si, respectively. The implanted subcollector HBT process and structure have been reported previously [7], [8]. Fig.…”

Section: Methodsmentioning

confidence: 98%

“…This new generation of HBTs offers significantly improved performance, integration, and device reliability. We have fabricated both single HBT(SHBT) and double HBT (DHBT) InP HBT devices with deep-submicron dimensions using a selectively ion-implanted subcollector [7], [8]. The buried subcollector device described here has the advantage of the additional heat spreading capability provided by having the subcollector buried in and surrounded by InP which has high thermal conductivity.…”

Section: Introductionmentioning

confidence: 99%

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Thermal Resistance Characterization of Implanted Subcollector InP-Based HBTs

Fields

Chen

Royter

et al. 2004

IEEE Trans. Device Mater. Relib.

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We present the results of measurements of thermal resistivity of the heterojunction bipolar transistor (HBT) devices, utilizing selective ion implantation to define the subcollector. This new device fabrication technique resulted in high-speed HBT devices with substantially reduced thermal resistivity, compared to devices utilizing the conventional fabrication approach which includes mesa isolation for pattern definition. The measurements were taken on full-thickness 3" InP wafers at amb from 30 C to 180 C and two separate emitter current densities. We present data on three device epitaxial structures with identical device layouts and discuss the relationship of be to temperature at these elevated power and temperature levels.

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Section: Methodsmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%