InP double‐hetero bipolar transistor technology for 130 GHz clock speed

Weimann, Nils; Houtsma, Vincent; Yang, Youngoo; Frackoviak, J.; Tate, A.; Chen, J.; Weiner, J. S.; Lee, J.; Baeyens, Y.; Chen, Y. K.

doi:10.1002/pssc.200564169

Cited by 9 publications

(2 citation statements)

References 3 publications

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“…For high-performance devices with a 0.5 ϫ 4 mm 2 emitter size, seen in Figure 5, we replace yield-limiting wet etch steps and emitter-metal lift-off with dry etch by inductively coupled plasma [28]. Furthermore, i-line stepper lithography is used on the 3 inch substrates throughout the entire process flow.…”

Section: Process Technologymentioning

confidence: 99%

InP DHBT circuits: From device physics to 40Gb/s and 100Gb/s transmission system experiments

Weimann¹,

Houtsma²,

Kopf³

et al. 2009

Bell Labs Tech. J.

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The capacity of fiber-optic telecommunication systems can be increased by higher data rate signaling. We present key analog and digital circuits which find application as building blocks in future very high data rate systems. The circuits are fabricated in our indium phosphide (InP) double-heterojunction bipolar transistor (DHBT) technology. The physical properties of the InP material system, notably high breakdown and high electron mobility, enable functions that are not accessible with current silicon-based high-speed technologies, including SiGe. Device and circuit results are presented, and we report on transmission system experiments conducted with these InP DHBT circuits. © 2009 Alcatel-Lucent.wider basis, and 100 Gb/s systems are beginning to emerge as the next generation in Ethernet networks, attractive for packet-switched architectures [7]. This progress has been made possible due to various microelectronics developments, using different materials, such as well-known silicon, but also III-V compound materials such as indium phosphide.To date, a wide choice of high-speed electronic technologies is available to the circuit and system designer. RF CMOS can handle all functions necessary for fiber-optic electronic front ends [22] at 10 Gb/s, and most functions at 40 Gb/s [15]. SiGe BiCMOS technologies [9] with device cutoff frequencies around 300 GHz provide enough speed to realize MUX, DEMUX, and CDR up to 100 Gb/s. The 45 nm

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Section: Process Technologymentioning

confidence: 99%

InP DHBT circuits: From device physics to 40Gb/s and 100Gb/s transmission system experiments

Weimann¹,

Houtsma²,

Kopf³

et al. 2009

Bell Labs Tech. J.

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“…It is indeed the advancement in understanding epitaxial growth and developing epitaxial growth techniques in the past several decades that has been enabling impressive and continuous developments of functional devices such as hetero-bipolar transistors [4], light emitting diodes [5], laser diodes [6], photodetectors [7], and photovoltaic devices [8] in microelectronics and optoelectronics in either commercial products being rolled out from industries or research topics inspiring laboratories. Epitaxy and resulting single-crystal films apparently contribute to a core of many important scientific and technological fields.…”

Section: Introductionmentioning

confidence: 99%

Randomly oriented indium phosphide nanowires for optoelectronics

Kobayashi

Logeeswaran

et al. 2007

SPIE Proceedings

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The concept of randomly-oriented semiconductor nanowires formed on non-single-crystal substrates is introduced and compared with semiconductor nanowires synthesized on single-crystal-substrates in the framework of epitaxial growth. In principle, epitaxial growth of semiconductor nanowires with the presence of metal-catalysts requires no single-crystal substrates owing to the small size of nanowires. A segment on a substrate from which crystallographic information is transferred to a single nanowire would only need to be as larger as the cross-section of a nanowire if a specific geometrical alignment for a group of nanowires is not required, suggesting that randomly-oriented semiconductor nanowires be formed on a surface that is characterized with short-range atomic order in contrast to long-range atomic order that exists on the surface of single-crystal substrates. The surfaces exhibiting short-range atomic order can be prepared on non-single-crystal substrates, further suggesting functional devices that utilize randomly-oriented semiconductor nanowires be fabricated on non-single-crystal substrates. Design, fabrication and characteristics of a photoconductor that utilizes an ensemble of randomly-oriented indium phosphide nanowires are described.

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