InP-based PIC for an optical phased-array antenna at 1.06 μm

Flamand, Giovanni; Mesel, Kurt De; Moerman, Ingrid; Dhoedt, Bart; Hunziker, Walter; Kalmar, Andras; Baets, Roel; Daele, Peter Van; Leeb, Walter R.

doi:10.1109/68.853532

Cited by 10 publications

(2 citation statements)

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“…However, enhancement of the linear component in the 3SQW modulator compensates for this effect, and modulation efficiency is comparable to the efficiency of the best conventional quantum wells, and more than three times better than the efficiency of bulk semiconductors. [11][12][13] Also, modulator efficiency is more than one order of magnitude higher than the efficiency of modulators based on lithium niobate. 14 The linear-to-quadratic coefficient ratio is about 640, which is about 64 times better than the conventional quantum wells, and more than one order of magnitude better than bulk semiconductors.…”

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confidence: 99%

Highly linear and efficient phase modulators based on GaInAsP-InP three-step quantum wells

Mohseni

An²,

Shellenbarger³

et al. 2005

Applied Physics Letters

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Highly linear and efficient phase modulators based on three-step quantum wells are reported. The spatial separation of electron and hole wave functions in the three-step quantum well leads to enhancement of the linear electro-optic component. In parallel, the quadratic electro-optic component is suppressed using a method based on tailored doping profile. Measured modulation efficiency is 48°/mm V, and the ratio of linear to quadratic components of the phase modulation is 640 at = 1560 nm. The efficiency is similar to the best reported values for semiconductor modulators at this wavelength, while the linearity is more than one order of magnitude higher.

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confidence: 99%

Highly linear and efficient phase modulators based on GaInAsP-InP three-step quantum wells

Mohseni

An²,

Shellenbarger³

et al. 2005

Applied Physics Letters

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“…Higher delay resolution (required for antennas operating at high frequency) can also be improved with an integrated photonics approach. A number of photonic integration platforms have been used, such as polymer technology [37]- [39], silica [40]- [43], LiNbO 3 [44], GaAs [45], [46], and InP [47], [48]. A recent example [49] using ultralow-loss Si 3 N 4 substrate showed a fully integrated 4-bit TTD line capable of delays above 12 ns, corresponding to about 2.4 m of propagation length, on a chip area of 4.5 cm # 8.5 cm, with waveguide losses as low as 1 dB/m (Figure 7).…”

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confidence: 99%