InP-Based Optically Pumped VECSEL Operating CW at 1550 nm

Lindberg, Hans; Strassner, M.; Bengtsson, Jörgen; Larsson, Anders

doi:10.1109/lpt.2003.823127

Cited by 22 publications

(6 citation statements)

References 8 publications

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“…Barrier pumped VECSELs can absorb all of the pump light in either a single or double pass through an extremely thin (5-10 µm) active layer and can use offthe-shelf low cost pumps requiring no temperature stabilization. Because VECSELs are based on semiconductor QW materials, they provide wavelength agile systems and have already been demonstrated to operate around 675 nm (InGaP) [19], 850 nm (GaAs) [18], 980 nm (InGaAs) [30], 1500 nm (InGaPAs) [32] and 2400 nm (GaSb) [42].…”

Section: Designing High Power Vertical External Cavity Semiconductor mentioning

confidence: 99%

Quantum design of semiconductor active materials: laser and amplifier applications

Moloney

Hader

Koch³

2007

Laser & Photonics Reviews

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Abstract:We present an overview of a novel first-principles quantum approach to designing and optimizing semiconductor quantum-well material systems for target wavelengths. Using these microscopic inputs as basic building blocks we predict the light-current (LI) characteristic for a low power InGaPAs ridge laser without having to use adjustable fit parameters. Finally we employ these microscopic inputs to develop sophisticated simulation capabilities for designing and optimizing end packaged high power laser structures. As an explicit example of the latter, we consider the design of a vertical external cavity semiconductor laser (VECSEL).Experimental (circles and squares) and theoretical (solid lines) photoluminescence (green/blue) and modal gain (black/red) for a 5-nm wide InGaAs quantum well sandwiched between GaAs barriers

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Section: Designing High Power Vertical External Cavity Semiconductor mentioning

confidence: 99%

Quantum design of semiconductor active materials: laser and amplifier applications

Moloney

Hader

Koch³

2007

Laser & Photonics Reviews

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show abstract

“…Barrier pumped VECSELs can absorb all of the pump light in either a single or double pass through an extremely thin (5 -10 µm) active layer and can use off-the-shelf low cost pumps requiring no temperature stabilization. Because VECSELs are based on semiconductor QW materials, 8 , 850nm (GaAs) 9 , 980 nm (InGaAs) 10 , 1500 nm (InGaPAs) 11 and 2400nm (GaSb) 12 Figure 8. Schematic of a vertical external cavity semiconductor laser.…”

Section: Designing High Power Vertical External Cavity Semiconductor mentioning

confidence: 99%

Closed-loop design of a semiconductor laser

et al. 2007

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We present an overview of a novel first principles quantum approach to designing and optimizing semiconductor QW material systems for target wavelengths. Using these microscopic inputs as basic building blocks we predict the L-I characteristic for a low power InGaPAs ridge laser without having to use adjustable fit parameters. Finally we employ these microscopic inputs to develop sophisticated simulation capabilities for designing and optimizing end packaged high power laser structures. As an explicit example of the latter, we consider the design and experimental demonstration of a vertical external cavity semiconductor laser (VECSEL).

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“…Recently, the growing interest for VECSEL has triggered their developments at various wavelengths such as the red [1], 1-µm [2], 1.3-µm [3] and 1.55-µm [4]. VECSELs have the potential to generate high power singe-transverse-mode output beams with tunable narrow linewidth spectrum.…”

Section: Introductionmentioning

confidence: 99%