Abstract:A bias-selectable near-infrared (NIR) and extended short wavelength infrared (eSWIR) dual-band bandgap engineered Ga0.51As0.49Sb/Al0.85Ga0.15AsSb/T2SL (In0.53Ga0.47 As/Ga0.51As0.49Sb) infrared photodetector, vertically stacked in a monolithic grown on InP substrate, is demonstrated. GaAsSb NIR sub-detector and T2SL eSWIR sub-detector are operated under small forward and reverse bias, respectively. The GaAsSb sub-detector functions within the NIR spectrum, with a 100% cutoff wavelength of 1.72 μm at 50 mV, achi… Show more
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