2-µm-wavelength-range silicon-on-insulator (SOI) arrayed waveguide gratings (AWGs) with heterogeneously integrated InP-based type-II quantum well photodetectors are presented. Low insertion loss (2.5-3 dB) and low crosstalk (−30 to −25 dB) AWGs are realized. The InP-based type-II photodetectors are integrated with the AWGs using two different coupling approaches. Adiabatic-taper-based photodetectors show a responsivity of 1.6 A/W at 2.35 µm wavelength and dark current of 10 nA at −0.5 V, while photodetectors using grating-assisted coupling have a responsivity of 0.1 A/W and dark current of 5 nA at −0.5 V. The integration of the photodetector array does not degrade the insertion loss and crosstalk of the device. The photodetector epitaxial stack can also be used to realize the integration of a broadband light source, thereby enabling fully integrated spectroscopic systems. µm Ge islands resonant-cavity-enhanced detector with high-reflectivity bottom mirror," Appl. Phys. Lett. 85(14), 2697-2699 (2004).