Inorganic to organic crossover in thin films deposited from O2/TEOS plasmas

Vallée, C.; Goullet, Antoine; Granier, A.; Lee, A van der; Durand, J.; Marlière, C.

doi:10.1016/s0022-3093(00)00232-5

Cited by 62 publications

(48 citation statements)

References 37 publications

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“…Although, we do not have enough evidence to propose a complete mechanism to account for the formation of the SiO 2 thin films, in line with the previous results by Jauberteau 25 and other authors, 9,10 it is reasonable to assume that the formation of the oxide film from TMSCl is a process that involves the adsorption on the substrate of either the precursor molecule or some reactive fragments resulting from its activation and eventual fragmentation. On the surface, the competition between the polymerization of these fragments to yield SiO x C y H z polymeric chains and the oxidation or etching of organic fragments of these films leading to the removal of organic components will control the formation of SiuO bonds.…”

Section: Plasma-enhanced Chemical Vapor Deposition Thin-film Formasupporting

confidence: 82%

“…There are some advantages in using organosilicon precursors, such as their safer handling, the fact that they yield a better step coverage, and the possibility to prepare inorganic SiO 2 as well as polymeric SiO x C y H z thin films, depending on the dilution degree of the precursor in the oxidizing gas. 9,10 More recently, the use of TMS for preparing SiO 2 thin films by PECVD has been introduced because the films deposited with TMSϩO 2 mixtures produce better water repellent layers than thin films deposited by using an ethoxide-like tetramethoxysilaneϩO 2 . 11 Other authors have also shown that by using TMSϩO 2 , it is possible to deposit hydrophobic SiO x thin films in a corona discharge plasma at atmospheric pressure.…”

Section: Introductionmentioning

confidence: 99%

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Plasma-enhanced chemical vapor deposition of SiO2 from a Si(CH3)3Cl precursor and mixtures Ar/O2 as plasma gas

Barranco

Cotrino

Yubero

et al. 2003

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Silicon dioxide thin films have been prepared at room temperature by remote plasma-enhanced chemical vapor deposition in a downstream reactor by using Si(CH 3 ) 3 Cl as a volatile precursor and a microwave electron cyclotron resonance external source. Experiments are done at constant pressure by changing the relative amount of Ar species R in the plasma gas. The aim was to obtain thin films with low density and, therefore, low refractive index. Characterization of the species of the plasma is carried out by optical emission spectroscopy. The changes of the plasma conditions are correlated with the growing rate and microstructure of the films, the latter determined by atomic force microscopy and infrared spectroscopy. It is found that the growing rate of the films decreases and their roughness increases as R increases. The optical properties of SiO 2 thin films are analyzed by optical ellipsometry. A decrease in the refractive index is found for the films grown with high values of R. The possible routes for activation of the precursor and the formation of the SiO 2 thin films are discussed.

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Section: Plasma-enhanced Chemical Vapor Deposition Thin-film Formasupporting

confidence: 82%

Section: Introductionmentioning

confidence: 99%

Plasma-enhanced chemical vapor deposition of SiO2 from a Si(CH3)3Cl precursor and mixtures Ar/O2 as plasma gas

Barranco

Cotrino

Yubero

et al. 2003

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…2) is in agreement with the appreciable intensity of vibrations at 2800-3000 cm -1 and 1460 cm -1 , ascribed to the -CH 3 stretching and bending modes, respectively. [3,6,13,18] In order to obtain a deeper insight into the linkages between these groups and the Si-O-Si network, more accurate analyses of the IR spectra were performed (Fig. 3b and c).…”

Section: Resultsmentioning

confidence: 99%

Low‐Temperature PECVD of Transparent SiO_xC_yH_z Thin Films

Barreca

Gasparotto

Maccato

et al. 2007

Chemical Vapor Deposition

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Hybrid organic/inorganic SiO x C y H z thin films are prepared on Cu, Si(100), and SiO 2 substrates by plasma-enhanced (PE)CVD using tetramethoxysilane (TMOS) as the precursor compound. Depositions are performed from Ar plasmas at temperatures as low as 60°C, avoiding the use of oxidizing reagents in view of possible film application as protective coatings against substrate oxidation. In situ monitoring of deposition processes is performed using laser reflection interferometry (LRI), which provides valuable information on the growth rate as a function of the adopted synthesis conditions. The obtained film thickness values are confirmed by scanning electron microscopy (SEM), which is also used to investigate the film morphology and its adhesion to the substrate. The chemical structure and composition are investigated in detail by a combined use of energy dispersive X-ray spectroscopy (EDX), Fourier transform infrared (FTIR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). Glancing incidence X-ray diffraction (GIXRD) and UV-vis spectroscopy are used for the study of the structural and optical properties of the system. Finally, nanoindentation measurements permit the evaluation of the hardness of the synthesized coatings. Amorphous layers with a silica-like network incorporating covalently bonded methyl and methoxy groups are obtained under very mild synthesis conditions. Furthermore, the coatings are characterized by good substrate conformal coverage and remarkable optical transparency.

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“…SiO 2 coatings are routinely obtained by low-temperature PECVD processes from a number of different organosilicon precursors, and the deposition conditions used determine the structure of the SiO 2 layer deposited. [19][20][21] Infrared absorption spectroscopy of films deposited from hexamethyl disiloxane (HMDSO) and oxygen (gas ratio HMDSO/O 2 was 1:10) provides information on the structural and compositional properties of the SiO 2 -like films, Figure 1a. The three transverse optical (TO) modes at 460, 800, and 1075 cm -1 are well documented in transmission measurements and are identified as the rocking, bending, and asymmetric stretching modes of the Si-OSi bond.…”

Section: Adhesion Aspectsmentioning

confidence: 99%

Recent and Expected Roles of Plasma‐Polymerized Films for Biomedical Applications

Förch¹,

Chifen²,

Bousquet³

et al. 2007

Chemical Vapor Deposition

141

125

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This review aims to provide a summary of some of the challenges in correlating surface science and biology, with particular emphasis on areas where plasma polymerization has and will play an important role as a method to synthesize reproducible and well-defined surfaces. Since the range of possible applications of plasma polymer films in biomaterial applications is immense, this paper will focus on processes to develop various surface morphologies and chemical structures for the immobilization of proteins and cells. Functional, plasma-polymerized films are discussed as biosensitive interfaces that may ultimately be part of a multilayer system that aims at connecting inorganic/metallic transducers with biologically reactive surfaces. These topics will be reviewed with some experimental results taken from the authors' own work. Specific aspects such as adhesion improvement and solvent effects are also discussed.

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Inorganic to organic crossover in thin films deposited from O2/TEOS plasmas

Cited by 62 publications

References 37 publications

Plasma-enhanced chemical vapor deposition of SiO2 from a Si(CH3)3Cl precursor and mixtures Ar/O2 as plasma gas

Plasma-enhanced chemical vapor deposition of SiO2 from a Si(CH3)3Cl precursor and mixtures Ar/O2 as plasma gas

Low‐Temperature PECVD of Transparent SiO_xC_yH_z Thin Films

Recent and Expected Roles of Plasma‐Polymerized Films for Biomedical Applications

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Inorganic to organic crossover in thin films deposited from O2/TEOS plasmas

Cited by 62 publications

References 37 publications

Plasma-enhanced chemical vapor deposition of SiO2 from a Si(CH3)3Cl precursor and mixtures Ar/O2 as plasma gas

Plasma-enhanced chemical vapor deposition of SiO2 from a Si(CH3)3Cl precursor and mixtures Ar/O2 as plasma gas

Low‐Temperature PECVD of Transparent SiOxCyHz Thin Films

Recent and Expected Roles of Plasma‐Polymerized Films for Biomedical Applications

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Low‐Temperature PECVD of Transparent SiO_xC_yH_z Thin Films