Inorganic materials and coatings produced by EBPVD

Abstract

The present paper describes the process of high speed electron beam evaporation of inorganic substances under vacuum and process parameters controlling the deposition, structure and properties of thick condensates (films). Considered are examples of single phase and multiphase metal, metal-ceramic, cermet and ceramic condensates of the thickness from several micrometres to several millimetres with dispersed, multilayer, porous and graded structures in a broad range of structural element dimensions. Dimensional effects in the structure and mechanical properties of thick condensates are noted. Areas of practical application of inorganic materials deposited from the vapour phase are described.

Electron beam physical vapor deposition of YSZ electrolyte coatings for SOFCs

“…Due to the intrinsic characteristics of EB-PVD, non-equilibrium condensation of vapor phase will lead to the development of microporous structure according to so-called ''shadowing effect'' [13]. This microporous transformation occurred after annealing treatment at 1000 8C.…”

Characterization of the evaporation behavior of a β-SiC target during electron beam-physical vapor deposition

“…Owing to its high deposition rate, easy control for chemical constitution and pollution-free to environment, EB-PVD technology is adequate to deposition SiC coatings. Although ␤-SiC coating has been widely studied [4][5][6][7][8]13,14], its evaporation behavior is rarely studied, and also hardly characterized due to its decomposition [9,15]. In fact, when SiC target is heated by high energy EB, the evaporation behavior of SiC target has a severe effect on final coating [16].…”

“…Electron beam-physical vapor deposition (EB-PVD) is a potential technique for producing near theoretical density and oxide-free condensates [9][10][11][12]. Owing to its high deposition rate, easy control for chemical constitution and pollution-free to environment, EB-PVD technology is adequate to deposition SiC coatings.…”

Characterization of a stoichiometric SiC film deposited on a thermally oxidized Si substrate

“…However, the stoichiometric SiC film is hardly prepared by direct evaporation. The reason is that SiC will partly decompose when directly evaporated, and the famous author Movchan also states that it is hard to prepare stoichiometric SiC coating by direct evaporating SiC due to its decomposition [5]. One way, it is quite significant to prepare a stoichiometric SiC film by direct liquid evaporation with optimizing EB-PVD technology for saving experiment time and fund.…”