Inorganic copper-based hole transport materials for perovskite photovoltaics: Challenges in normally structured cells, advances in photovoltaic performance and device stability

Matondo, Jadel Tsiba; Maurice, Davy Malouangou; Chen, Qin; Bai, Liang; Guli, Mina

doi:10.1016/j.solmat.2021.111011

Cited by 28 publications

(14 citation statements)

References 150 publications

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“…Owing to the high hole conductivity of CuI and the well‐aligned VBM with the emerging solar absorber layers, for example, methylammonium lead iodide (MAPbI 3 ) perovskite, CuI has been widely utilized as an inexpensive dopant or promising alternative to organic HTLs in organic or perovskite solar cells, leading to an enhanced power conversion efficiency (PCE) and stability. [ 15 , 152 , 153 , 154 , 155 ] The first attempt to incorporate CuI HTLs into solar cells was reported by Christians et al. in 2014.…”

Section: Cui Applications In Thermo/optoelectronic Devicesmentioning

confidence: 99%

“…Owing to the high hole conductivity of CuI and the well-aligned VBM with the emerging solar absorber layers, for example, methylammonium lead iodide (MAPbI 3 ) perovskite, CuI has been widely utilized as an inexpensive dopant or promising alternative to organic HTLs in organic or perovskite solar cells, leading to an enhanced power conversion efficiency (PCE) and stability. [15,[152][153][154][155] The first attempt to incorporate CuI HTLs into solar cells was reported by Christians et al in 2014. [156] A 1.5 µm thick CuI was deposited on a porous TiO 2 /MAPbI 3 layer by using an automated drop-casting method at low temperatures and a promising PCE of 6.0% with excellent photocurrent stability was achieved (Figure 10a).…”

Section: Solar Cellsmentioning

confidence: 99%

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Engineering Copper Iodide (CuI) for Multifunctional p‐Type Transparent Semiconductors and Conductors

et al. 2021

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Developing transparent p-type semiconductors and conductors has attracted significant interest in both academia and industry because metal oxides only show efficient n-type characteristics at room temperature. Among the different candidates, copper iodide (CuI) is one of the most promising p-type materials because of its widely adjustable conductivity from transparent electrodes to semiconducting layers in transistors. CuI can form thin films with high transparency in the visible light region using various low-temperature deposition techniques. This progress report aims to provide a basic understanding of CuI-based materials and recent progress in the development of various devices. The first section provides a brief introduction to CuI with respect to electronic structure, defect states, charge transport physics, and overviews the CuI film deposition methods. The material design concepts through doping/alloying approaches to adjust the optoelectrical properties are also discussed in the first section. The following section presents recent advances in state-of-the-art CuI-based devices, including transparent electrodes, thermoelectric devices, p-n diodes, p-channel transistors, light emitting diodes, and solar cells. In conclusion, current challenges and perspective opportunities are highlighted.

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Section: Cui Applications In Thermo/optoelectronic Devicesmentioning

confidence: 99%

Section: Solar Cellsmentioning

confidence: 99%

Engineering Copper Iodide (CuI) for Multifunctional p‐Type Transparent Semiconductors and Conductors

et al. 2021

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“…Spiro-MeOTAD is expensive but has been preferably employed as an organic hole-transfer layer (HTL) because it is soluble in chlorobenzene, which prevents the decomposition of solvent-sensitive PVKs. To develop all-inorganic solar cells using inorganic PVKs (CsPbX 3 , X = Cl, Br, I), inorganic HTLs are necessary, but representative materials such as NiO, CuI, CuSCN, and MoO 3 are insoluble: therefore, both preparation technologies for their precursor solutions and solvent-compatible technologies with PVKs are required. , Alternatively, SWNT films commonly behave as p-type semiconductors (HTLs) that promote hole separation from PVKs . Therefore, as a pseudomodel, we stacked a SWNT thin film (p-SWNT) with increased density (4.7 μg cm –2 ; transmittance = 60% at 550 nm) on the PTFE@SWNT/AgML(purified) by filtration, thus obtaining ethanol-wetted PTFE@SWNT/AgML(purified)/p-SWNT (Figure S1c).…”

Section: Resultsmentioning

confidence: 99%

Low-Temperature Edge-Fusing Phenomenon of Silver Microplates and Solution-Processed Low-Resistivity Top-Contact Electrodes

Furusawa

Ando

Daiguji

et al. 2022

ACS Appl. Electron. Mater.

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The formation of low-temperature solution-processed electrodes from cost-effective and abundant materials is expected to realize all-solution-processed film devices. Silver microplates (AgMLs) can replace metal electrodes formed via high-energy and high-material-consuming processes such as vacuum-evaporation deposition; however, the intrinsic potentials of AgMLs have remained veiled, limiting both industrial applications and scientific research. Here, AgMLs with lateral growth to 3 μm are prepared and filtered through their aqueous dispersion solution on a polytetrafluoroethylene membrane. Assisted by the solvent wettability and flexibility of the membrane, a face-to-face stacked AgML film forms on the membrane and adheres to a glass plate without any external pressure. The film spontaneously transfers onto the plate after the wet solvent evaporates. A low-temperature edge-fusing phenomenon of AgMLs is discovered. Thermogravimetric analysis–synchronized mass spectroscopy reveals that edge fusion is induced from the {100} surfaces of AgMLs by catalytic N–C bond cleavage, which triggers low-temperature decomposition of the surface-protecting polyvinylpyrrolidone at ≤200 °C. The edge fusion markedly improves the volume resistivity of the AgML film to single digits (∼7 μΩ cm), but the resistivity is still higher than 1.6 μΩ cm in bulk silver. We also mention a solvent-compatible method for transferring a AgML film onto solvent-sensitive perovskite materials such as CH3NH3PbI3 and CsPbBr3.

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“…With a bandgap of around 3.1 eV 19,25 , large exciton binding energies of 62 meV 25 and high hole mobilites 26 of µ > 40 cm 2 V −1 s −1 in bulk single crystals, γ-CuI is a suitable transparent ptype material for optoelectronic applications. Until now, the application potential of CuI has already been demonstrated in transparent p-n heterojunctions 27 , thin film transistors 2,28,29 , light-emitting diods 30,31 , perovskite solar cells [32][33][34] , UV-photodetectors 35 and thermoelectric devices 5 . Additionally, compatibility with several ntype materials has been proven by building prototype devices 27,[36][37][38] .…”

Section: Introductionmentioning

confidence: 99%

Dielectric function of CuBr$_\mathrm{x}$I$_{1-\mathrm{x}}$ alloy thin films

Seifert¹,

Krüger²,

Bär³

et al. 2022

Preprint

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We study the dielectric function of CuBrx I1-x thin film alloys using spectroscopic ellipsometry in the spectral range between 0.7 eV to 6.4 eV, in combination with first-principles calculations based on density functional theory. Through the comparison of theory and experiment, we attribute features in the dielectric function to electronic transitions at specific k-points in the Brillouin zone. The observed bandgap bowing as a function of alloy composition is discussed in terms of different physical and chemical contributions. The band splitting at the top of the valence band due to spin-orbit coupling is found to decrease with increasing Br-concentration, from a value of 660 meV for CuI to 150 meV for CuBr. This result can be understood considering the contribution of copper d-orbitals to the valence band maximum as a function of the alloy composition.

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Inorganic copper-based hole transport materials for perovskite photovoltaics: Challenges in normally structured cells, advances in photovoltaic performance and device stability

Cited by 28 publications

References 150 publications

Engineering Copper Iodide (CuI) for Multifunctional p‐Type Transparent Semiconductors and Conductors

Engineering Copper Iodide (CuI) for Multifunctional p‐Type Transparent Semiconductors and Conductors

Low-Temperature Edge-Fusing Phenomenon of Silver Microplates and Solution-Processed Low-Resistivity Top-Contact Electrodes

Dielectric function of CuBr$_\mathrm{x}$I$_{1-\mathrm{x}}$ alloy thin films

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