Inorganic block copolymer lithography

Nunns, Adam; Gwyther, Jessica; Manners, Ian

doi:10.1016/j.polymer.2012.11.057

Cited by 146 publications

(138 citation statements)

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“…As-synthesized metal containing BCPs have been highlighted recently to circumvent this issue and two reviews are available. [ 37,38 ] Therefore, this review aims to provide an overview of versatile ex-situ infi ltration techniques on as-formed BCP patterns. Ideally, BCP materials should allow a facile highly selective pattern transfer resulting in high aspect ratio features (i.e., the ratio of lateral to vertical dimensions) as shown in Figure 1 c.…”

Section: Reviewmentioning

confidence: 99%

Strategies for Inorganic Incorporation using Neat Block Copolymer Thin Films for Etch Mask Function and Nanotechnological Application

et al. 2016

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Block copolymers (BCPs) and their directed self-assembly (DSA) has emerged as a realizable complementary tool to aid optical patterning of device elements for future integrated circuit advancements. Methods to enhance BCP etch contrast for DSA application and further potential applications of inorganic nanomaterial features (e.g., semiconductor, dielectric, metal and metal oxide) are examined. Strategies to modify, infiltrate and controllably deposit inorganic materials by utilizing neat self-assembled BCP thin films open a rich design space to fabricate functional features in the nanoscale regime. An understanding and overview on innovative ways for the selective inclusion/infiltration or deposition of inorganic moieties in microphase separated BCP nanopatterns is provided. Early initial inclusion methods in the field and exciting contemporary reports to further augment etch contrast in BCPs for pattern transfer application are described. Specifically, the use of evaporation and sputtering methods, atomic layer deposition, sequential infiltration synthesis, metal-salt inclusion and aqueous metal reduction methodologies forming isolated nanofeatures are highlighted in di-BCP systems. Functionalities and newly reported uses for electronic and non-electronic technologies based on the inherent properties of incorporated inorganic nanostructures using di-BCP templates are highlighted. We outline the potential for extension of incorporation methods to triblock copolymer features for more diverse applications. Challenges and emerging areas of interest for inorganic infiltration of BCPs are also discussed.

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Section: Reviewmentioning

confidence: 99%

Strategies for Inorganic Incorporation using Neat Block Copolymer Thin Films for Etch Mask Function and Nanotechnological Application

et al. 2016

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“…In this context, organic DBCs systems having high-χ AB such as: polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP), polystyrene-block-poly(4-vinylpyridine) (PS-b-P4VP), polystyrene-block-polyethylene oxide (PS-b-PEO), polystyrene-block-polylactide (PS-b-PLA) are extremely appealing to achieve ultra-small features. Unfortunately, the low etch selectivity between blocks limits their application [20,54]. The incorporation of inorganic segments into the DBC could be an attractive solution to solve this issue.…”

Section: Bcps Backgroundmentioning

confidence: 99%

“…The incorporation of inorganic segments into the DBC could be an attractive solution to solve this issue. Among the inorganic DBCs, silicon-containing DBCs are particularly interesting because upon exposure to oxygen plasma, the silicon segment is converted to SiO x forming nanostructures that provide enhanced contrast for subsequent pattern transfer into the underlying substrate, while the organic segment degrades under the same treatment [54]. This property can be exploited Figure 2.…”

Section: Bcps Backgroundmentioning

confidence: 99%

Technological strategies for self-assembly of PS-b-PDMS in cylindrical sub-10 nm nanostructures for lithographic applications

Giammaria

Laus

Perego³

2018

Advances in Physics: X

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The continuous demand for small portable electronics is pushing the semiconductor industry to develop novel lithographic methods to fabricate the elementary structures for microelectronics devices with dimensions below 10 nm. Topdown strategies include multiple patterning photolithography, extreme ultraviolet lithography (EUVL), electron beam lithography (EBL), and nanoimprint lithography. Bottom-up approaches mainly rely on block copolymers (BCPs) self-assembly (SA). SA of BCPs is extremely appealing due to its excellent compatibility with conventional photolithographic processes, high-resolution patterns, and low process costs. Among the various BCPs, the polystyrene-b-polydimethylsiloxane (PS-b-PDMS) represents the most investigated material for the fabrication of sub-10 nm structures. However, PS-b-PDMS cannot be easily processed by conventional thermal treatments due to its slow SA kinetic coupled with a relatively low thermal stability. This review focuses on the available annealing methods to promote the SA PS-b-PDMS in parallel-oriented cylindrical sub-10 nm structures. Moreover, literature data regarding the annealing time, defects density, line edge roughness (LER) and line width roughness (LWR) are discussed with reference to the stringent requirements of semiconductor technology.

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“…[283][284][285][286][287] The presence of iron and silicon atoms into the backbone of PFS means that it has a high resistance to reactive ion etching (RIE) when compared to organic polymers. 257 For example, PMMA has an O2 RIE etching rate of 200 nm min -1 , whilst PFS has an etching rate of 4 nm min -1 .…”

Section: Applications Of Pfs Bcp Thin Filmsmentioning

confidence: 99%

“…203,287,[298][299][300][301][302][303][304] BCPs with a metalloblock have garnered significant attention with respect to the formation of nanotemplates. One of the earliest examples involves the formation of arrays of tungstencapped cobalt nanodots using a PS-b-PFEMS diblock copolymer thin film, which is outlined in the schematic in Figure 27.…”

Section: Pfs Bcp Thin Films For Nanolithography and Nanotemplatingmentioning

confidence: 99%

Synthesis and Solution Self‐Assembly of Polyisoprene‐block‐poly(ferrocenylmethylsilane): A Diblock Copolymer with an Atactic but Semicrystalline Core‐Forming Metalloblock

Qiu

Winnik

et al. 2016

Macro Chemistry & Physics

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Inorganic block copolymer lithography

Cited by 146 publications

References 149 publications

Strategies for Inorganic Incorporation using Neat Block Copolymer Thin Films for Etch Mask Function and Nanotechnological Application

Strategies for Inorganic Incorporation using Neat Block Copolymer Thin Films for Etch Mask Function and Nanotechnological Application

Technological strategies for self-assembly of PS-b-PDMS in cylindrical sub-10 nm nanostructures for lithographic applications

Synthesis and Solution Self‐Assembly of Polyisoprene‐block‐poly(ferrocenylmethylsilane): A Diblock Copolymer with an Atactic but Semicrystalline Core‐Forming Metalloblock

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