Innovative Methodology for Predictive Reliability of Intelligent Power Devices Using Extreme Electro-thermal Fatigue

Khong, Benjamin; Tounsi, P.; Dupuy, Philippe; Chauffleur, X.; Legros, Marc; Deram, A.; Levade, C.; Vanderschaeve, G.; Dorkel, Jean-Marie; Fradin, Jean-Pierre

doi:10.1016/j.microrel.2005.07.104

Cited by 12 publications

(10 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…One such method involves electrical pulsing of power MOSFETs under controlled temperatures to cause electrothermal fatigue [6,7]. These experiments induced stresses and hence aging conditions typically experienced by automotive components with current levels of 120A and a duty cycle of 5-10%.…”

Section: Related Workmentioning

confidence: 99%

Accelerated aging system for prognostics of power semiconductor devices

Celaya

Wysocki

Ващенко

et al. 2010

2010 Ieee Autotestcon

View full text Add to dashboard Cite

Abstract-Prognostics is an engineering discipline that focuses on estimation of the health state of a component and the prediction of its remaining useful life (RUL) before failure. Health state estimation is based on actual conditions and it is fundamental for the prediction of RUL under anticipated future usage. Failure of electronic devices is of great concern as future aircraft will see an increase of electronics to drive and control safety-critical equipment throughout the aircraft. Therefore, development of prognostics solutions for electronics is of key importance. This paper presents an accelerated aging system for gate-controlled power transistors. This system allows for the understanding of the effects of failure mechanisms, and the identification of leading indicators of failure which are essential in the development of physics-based degradation models and RUL prediction. In particular, this system isolates electrical overstress from thermal overstress. Also, this system allows for a precise control of internal temperatures, enabling the exploration of intrinsic failure mechanisms not related to the device packaging. By controlling the temperature within safe operation levels of the device, accelerated aging is induced by electrical overstress only, avoiding the generation of thermal cycles. The temperature is controlled by active thermal-electric units. Several electrical and thermal signals are measured in-situ and recorded for further analysis in the identification of leading indicators of failures. This system, therefore, provides a unique capability in the exploration of different failure mechanisms and the identification of precursors of failure that can be used to provide a health management solution for electronic devices.

show abstract

Section: Related Workmentioning

confidence: 99%

Accelerated aging system for prognostics of power semiconductor devices

Celaya

Wysocki

Ващенко

et al. 2010

2010 Ieee Autotestcon

View full text Add to dashboard Cite

show abstract

“…Since aluminum has a low mechanical yield stress, the source metallization is expected to deform plastically even at moderate temperature excursions (200 °C), whereas silicon remains in its elastic domain. The result is the wellknown phenomenon of Al surface reconstruction, which leads to an increase in the drain-source resistance (R dson ) over cycles, until failure [5][6][7][8]. Whereas this reconstruction can lead to catastrophic failure has still to be determined.…”

Section: Introductionmentioning

confidence: 99%

Aluminum metallization and wire bonding aging in power MOSFET modules

Ruffilli

Berkani

Dupuy³

et al. 2018

Materials Today: Proceedings

View full text Add to dashboard Cite

A limiting factor for the long-term reliability of power MOSFET-based devices is the electro-thermal and/or thermo-mechanical aging of the metallic parts. In this paper we assess the bonding wire and source metallization degradation of power devices, designed for applications in the automotive industry. Our approach consists in characterizing the metal microstructure before and after accelerated aging tests, by scanning electron microscopy, ion milling and microscopy, focused ion beam tomography, transmission electron microscopy and grain structure mapping. To focus on the wire-metallization bonding interface, we have set up a dedicated sample preparation that allows us to disclose the metallization under the bonding wires. This critical location is significantly different from the naked metallization, as the bonding process induces plastic deformation prior to aging. The main mechanism behind the device failure is the generation and propagation of fatigue cracks in the aluminum metallization. Away and under the wire bonds, they run perpendicularly from the surface down to the silicon substrate following the grain boundaries, due to an enhanced self-diffusion of aluminum atoms. Moreover, initial imperfections in the wire-metallization bonding (small cavities and aluminum oxide residues) are the starting point for harmful cracks that propagate along the wire-metallization interface and can eventually cause the wire lift-off. These phenomena can explain the local increase in the device resistance occurring at failure.

show abstract

“…Especially the soldered Cu heat sink and the Al metallization of the source covering the active transistor regions have much higher coefficient of thermal expansion than Si and are thus subject to high stresses [3,4]. In a previous study [5], we described a method based on accelerated electrothermal fatigue tests coupled with finite element simulations and microstructural characterizations. Our goal is to be able to predict the lifetime of Freescale SPSSs and reveal their weakest spots.…”

mentioning

confidence: 99%

“…2 Experimental setup Finite element simulations are described elsewhere [5] and only physical characterization methods will be described here. SPSS modules from Fresscale Semiconductors underwent cyclic 120 A square pulses with durations between 100 and 900 ms. For the purpose of this study, the overcurrent protection feature of the control die was disabled and devices were operated beyond their maximum ratings.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Alterations induced in the structure of intelligent power devices by extreme electro‐thermal fatigue

Khong

Legros

Dupuy³

et al. 2007

Phys. Status Solidi (c)

Self Cite

View full text Add to dashboard Cite

Microstructural analysis of power devices were carried out on components from Freescale Semiconductor that underwent extreme electrothermal fatigue. Several destructive and non destructive techniques were used. Altered layers are located on both sides of the Si substrate : at the heat sink (drain) and the Al metallization (source). Here, we have tried to establish a link between the increase of the transistor resistance and the amount of delamination of the solder at the die attach on one side and to the evolution of grain size and intergranular grooving on the other. Concerning the Al grain size, we will show that this parameter can be taken as a fatigue marker only in definite regions of the metallization.

show abstract

Innovative Methodology for Predictive Reliability of Intelligent Power Devices Using Extreme Electro-thermal Fatigue

Cited by 12 publications

References 5 publications

Accelerated aging system for prognostics of power semiconductor devices

Accelerated aging system for prognostics of power semiconductor devices

Aluminum metallization and wire bonding aging in power MOSFET modules

Alterations induced in the structure of intelligent power devices by extreme electro‐thermal fatigue

Contact Info

Product

Resources

About