Innovative design and optimized performance of thermoelectric transistor driven by the Seebeck effect

Nan, Bohang; Xu, Guiying; Yang, Quanxin; Zhang, Bin; Zhou, Xiaojing

doi:10.1016/j.enconman.2023.116880

Cited by 3 publications

(1 citation statement)

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“…Furthermore, Nan et al studied the output performance of a thermoelectric transistor driven by the Seebeck effect, in which the built-in electric field is perpendicular to the gradient temperature field. Results showed that the output power was 17.8 mW and conversion efficiency could reach 8.69% at a temperature difference of 50 °C [ 8 , 9 ].…”

Section: Introductionmentioning

confidence: 99%

Innovative Design of Bismuth-Telluride-Based Thermoelectric Transistors

Deng

Nan

2023

Materials

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Conventional thermoelectric generators, predominantly based on the π-type structure, are severely limited in their applications due to the relatively low conversion efficiency. In response to the challenge, in this work, a Bi2Te3-based thermoelectric transistor driven by laser illumination is demonstrated. Under laser illumination, a temperature difference of 46.7 °C is produced between the two ends of the transistor structure. Further, the hole concentrations in each region redistribute and the built-in voltages decrease due to the temperature difference, leading to the formation of the transistor circuit. Additionally, the operation condition of the thermoelectric transistor is presented. The calculation results demonstrate that the maximum output power of such a designed thermoelectric transistor is 0.7093 μW.

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Section: Introductionmentioning

confidence: 99%