Inner lead bonding technique for 500-lead dies having a 90- mu m lead pitch

Atsumi, K.; Kashima, N.; Maehara, Y.; Mitsuhashi, Tadahiro; Komatsu, Tadanori; Ochiai, Natsuha

doi:10.1109/33.52875

Cited by 16 publications

(3 citation statements)

References 1 publication

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“…We measured the TAB bond heights of these three inner leads in order to examine the relationship between the TAB bond height and UDR test results on the inner leads. A previous study [7] indicates that TAB ILB pull strength is empirically correlated with the ILB height Trace + __ bump. I.;;.:i:;:::::.:.:::::.::.:::.…”

Section: Tab Jib Height Measurement Resultsmentioning

confidence: 95%

<title>Package and module substrate interconnect evaluation by thermal time domain reflectometry (TTDR)</title>

1995

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A TAB package inner lead interconnect is characterized experimentally by thermal time-domain reflectometry. In order to estimate the low frequency thermal characteristic impedance of the lead in a module substrate, we apply WA (Total Pulse Area) steady state methodology to analyze transient 1TDR measurements. TAB ILB bond thicknesses are measured and compared with estimates of the thermal resistances of short portions of the inner leads terminating at the ILB. The ILB thermal constriction and contact resistance of the bonds measured appear to be negligible compared to the lead resistance.

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Section: Tab Jib Height Measurement Resultsmentioning

confidence: 95%

<title>Package and module substrate interconnect evaluation by thermal time domain reflectometry (TTDR)</title>

1995

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“…Tung et al [6] performed failure analysis of the ILB joint subjected to stress and found that one major failure was the lead fracture owing to the formation of intermetallic compound at the interface between the Cu lead and its Sn plating layer. Relevant investigations were also conducted, including understanding of the effects of process parameters on the ILB performance by using numerical simulation [7]- [10], development of novel ILB bonding without any Au bump [11], optimization of the bonding conditions to avoid degradation of the adhesive [12], and understanding of the eutectic AuSn microstructure and the Cu/Sn interfacial reactions [13]- [16]. Because of increasing demands on multifunctionality and variety of panel dimension, the packaging technology of LCD needs to move toward high-density input/output (I/O) connections and smaller size.…”

Section: Introductionmentioning

confidence: 99%

Intermetallic Compound Formation and Mechanical Property of Inner Lead Bonding Joints

Chen

Dow

et al. 2014

IEEE Trans. Compon., Packag. Manufact. Technol.

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A Sn-plated Cu lead is bonded with an Au bump to form an inner lead bonding (ILB) joint, and the adhesion strength of the joint is examined using peeling test. Effects of bonding temperature (force) on the joint's adhesion are investigated. The 200-nm-thick Sn layer at the bottom of the Cu lead is consumed, and two reaction product layers are formed at the Cu/Au interface after bonding. One is the ζ -(Au,Cu) 5 Sn phase next to Cu, and the other is the α phase, that is, the (Au) or (Cu) solid solution dissolved with minor Sn, next to Au. Nanocracks are easily formed in the α phase layer after peeling test, indicating that the α phase was the mechanically weakest point in the ILB joint. In the ILB joints fabricated at lower bonding temperatures (forces), nanocracks are initiated by peeling test and propagate along the bonding interface, resulting in complete detachment of the Cu lead from the Au bump. Raising the bonding temperatures (forces) contributed to a better coverage of Sn on both sides of the Cu lead and deeper embedment of the Cu lead in the Au bump. The adhesion strength of the ILB joint is enhanced, and accordingly the joint withstands the peeling test without delamination.Index Terms-Au bump, inner lead bonding (ILB), nanocracks, peeling test, Sn-plated Cu lead.

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“…Research topics on TCP technology have focused primarily on the inner lead bonding since GE invented it in 1968. Atsumi et al [2] proposed a study to investigate the inner lead bonding technology for 500 lead dies with 90 m pitch. This reference discussed the machine alignment accuracy, bonding accuracy, bonding conditions, tool planarity, parallelism on bond strength, bump deformation, and bond strength caused by contamination using test dies.…”

Section: Introductionmentioning

confidence: 99%

Recipe optimization and design software development of tape carrier package (TCP) inner lead bonding (ILB)

Yoon²,

Ahn³

et al. 2005

IEEE Trans. Electron. Packag. Manufact.

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This paper proposes an optimization methodology for quickly determining a bonding recipe for the inner lead bonding (ILB) of a tape carrier package (TCP). The recipe consists of the bonding force, stage temperature, bonding time, and geometrical forming. The bonding force derivation was based on the essential relationship between the bonding force and sinking value from the referred literature. The remaining three parameter equations were derived using empirical accumulation. The experimental data were collected by conducting eight TCP product trial runs to validate the methodology. In addition, the user-interface software was programmed to be user friendly. The development cycle time can be condensed from the average number of hours to less than one hour, revealing a time saving improvement during practical applications. Good yield rates were obtained as well.Index Terms-Bonding recipe, inner lead bonding (ILB), tape carrier package (TCP).

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Inner lead bonding technique for 500-lead dies having a 90- mu m lead pitch

Cited by 16 publications

References 1 publication

<title>Package and module substrate interconnect evaluation by thermal time domain reflectometry (TTDR)</title>

<title>Package and module substrate interconnect evaluation by thermal time domain reflectometry (TTDR)</title>

Intermetallic Compound Formation and Mechanical Property of Inner Lead Bonding Joints

Recipe optimization and design software development of tape carrier package (TCP) inner lead bonding (ILB)

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