InN Quantum Dot Based Infra-Red Photodetectors

Shetty, Arjun; Kumar, Mahesh; Roul, Basanta; Vinoy, K. J.; Krupanidhi, S. B.

doi:10.1166/jnn.2016.10679

Cited by 15 publications

(8 citation statements)

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“…The experimental observations are compared with simulation using the Silvaco Atlas device simulator. − An MSM device structure was created and modeled in 2D Silvaco Atlas, and the semiconductor properties for GaN were taken from the inbuilt material library. The effects of orientation along [0002], [1–102], and [1–100] directions were taken care of by using appropriate values of electron and hole mobilities (Figure d). , Here, the dislocations along [0002] azimuth are less than compared to [1–102] or [1–100], and it affects the electrical properties along that direction, particularly the mobility of charge carriers.…”

Section: Resultsmentioning

confidence: 99%

In-Plane Anisotropic Photoconduction in Nonpolar Epitaxial a-Plane GaN

Pant

Shetty

Chandan

et al. 2018

ACS Appl. Mater. Interfaces

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Nonpolar a-plane GaN epitaxial films were grown on an r-plane sapphire using the plasma-assisted molecular beam epitaxy system, with various nitrogen plasma power conditions. The crystallinity of the films was characterized by high-resolution X-ray diffraction and reciprocal space mapping. Using the X-ray "rocking curve-phi scan", [0002], [1-100], and [1-102] azimuth angles were identified, and interdigitated electrodes along these directions were fabricated to evaluate the direction-dependent UV photoresponses. UV responsivity ( R) and internal gain ( G) were found to be dependent on the azimuth angle and in the order of [0002] > [1-102] > [1-100], which has been attributed to the enhanced crystallinity and lowest defect density along [0002] azimuth. The temporal response was very stable irrespective of growth conditions and azimuth angles. Importantly, response time, responsivity, and internal gain were 210 ms, 1.88 A W, and 648.9%, respectively, even at a bias as low as 1 V. The results were validated using the Silvaco Atlas device simulator, and experimental observations were consistent with simulated results. Overall, the photoresponse is dependent on azimuth angles and requires further optimization, especially for materials with in-plane crystal anisotropy.

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Section: Resultsmentioning

confidence: 99%

In-Plane Anisotropic Photoconduction in Nonpolar Epitaxial a-Plane GaN

Pant

Shetty

Chandan

et al. 2018

ACS Appl. Mater. Interfaces

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“…In the meantime, researchers have also started exploring InN-based devices. One such work has been carried out by Shetty et al [49]. They have grown InN quantum dots of varying densities on Si substrates using MBE.…”

Section: Iii-nitrides-based Devicesmentioning

confidence: 99%

Group III-Nitrides and Their Hybrid Structures for Next-Generation Photodetectors

Singh¹,

Roul²,

Krupanidhi³

2021

Light-Emitting Diodes and Photodetectors - Advances and Future Directions [Working Title]

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In the last few decades, there has been a phenomenal rise and evolution in the field of III–Nitride semiconductors for optoelectronic applications such as lasers, sensors and detectors. However, certain hurdles still remain in the path of designing high-performance photodetectors (PDs) based on III-Nitride semiconductors considering their device performance. Recently, a lot of progress has been achieved in devices based on the high quality epilayers grown by molecular beam epitaxy (MBE). Being an ultra-high vacuum environment based-technique, MBE has enabled the realization of high-quality and highly efficient PDs which have exhibited competitive figures of merit to that of the commercial PDs. Moreover, by combining the novel properties of 2D materials with MBE-grown III-Nitrides, devices with enhanced functionalities have been realized which would pave a way towards the next-generation photonics. In the current chapter, the basic concepts about photodetection have been presented in detail, followed by a discussion on the basic properties of the III-Nitride semiconductors, and the recent advancements in the field of MBE-grown III-Nitrides-based PDs, with an emphasis on their hybrid structures. Finally, an outlook has been provided highlighting the present shortcomings as well as the unresolved issues associated with the present-day devices in this emerging field of research.

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“…High substrate temperature, low Ga flux and very high plasma power and N 2 flux were maintained, which provided Stranski-Krastanov (S-K) or layer-plus-island growth type conditions. The growth parameters were tuned such that the growth of thin film and nanostructures took place simultaneously [33,45,46]. Results of in situ and ex situ analyses proved that the simultaneous growth of GaN thin film at the bottom and a matrix of nanostructures on top of it took place with the help of the S-K growth mode.…”

Section: Introductionmentioning

confidence: 99%

Inhomogeneity-mediated systematic reduction of the Schottky barrier in a Au/GaN nanorod film interface

Pant¹,

Roul²,

Singh³

et al. 2020

Semicond. Sci. Technol.

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Self-aligned GaN nanorods of various densities are grown on an r-plane Al2O3 substrate with Stranski–Krastanov or layer-plus-island growth conditions by using a plasma-assisted molecular beam epitaxy system. These conditions result in the formation of a GaN nanorod matrix on an epitaxial GaN thin film. The orientation of the nanorods was found to be at an inclination of ∼60° from the substrate. As expected, the GaN thin film grows along the [11–20] direction, but interestingly the nanorods have a preferential growth direction along the [0002] axis. The overall structure mimics the Gaussian distribution of Schottky barriers at the metal–semiconductor interface. The GaN nanorod/thin-film matrix systematically causes the well-known Au/GaN Schottky metal–semiconductor interface to display an Ohmic type of behavior. A systematic reduction of the Schottky barrier is observed with an increase in the GaN nanorod density (from 5 to 65 nanorods micron−2). The overall configuration provides a tunable Gaussian distribution of Schottky barriers with nanorod density, which could be extremely useful for replacing conventional multi-level electrode stacking techniques.

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InN Quantum Dot Based Infra-Red Photodetectors

Cited by 15 publications

References 0 publications

In-Plane Anisotropic Photoconduction in Nonpolar Epitaxial a-Plane GaN

In-Plane Anisotropic Photoconduction in Nonpolar Epitaxial a-Plane GaN

Group III-Nitrides and Their Hybrid Structures for Next-Generation Photodetectors

Inhomogeneity-mediated systematic reduction of the Schottky barrier in a Au/GaN nanorod film interface

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