2024
DOI: 10.1016/j.mssp.2024.108321
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InN nanowire solar cells on Si with amorphous Si interlayer deposited by sputtering

M. Sun,
R. Gómez,
B. Damilano
et al.
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Cited by 2 publications
(1 citation statement)
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“…Researchers are working on a variety of tandem solar cell architectures, including (i) group III-V compound semiconductor multi-junction, (ii) perovskite/Si, (iii) perovskite/CIGS (copper indium gallium diselenide), (iv) CdTe/CIGS, (v) CdTe/Si, (vi) a-Si:H/μc-Si: H and others [18][19][20][21][22][23][24][25][26][27][28]. Currently, the most extensively investigated materials for tandem solar cells are 'group III-V compound' semiconductor materials and perovskite materials.…”
Section: Introductionmentioning
confidence: 99%
“…Researchers are working on a variety of tandem solar cell architectures, including (i) group III-V compound semiconductor multi-junction, (ii) perovskite/Si, (iii) perovskite/CIGS (copper indium gallium diselenide), (iv) CdTe/CIGS, (v) CdTe/Si, (vi) a-Si:H/μc-Si: H and others [18][19][20][21][22][23][24][25][26][27][28]. Currently, the most extensively investigated materials for tandem solar cells are 'group III-V compound' semiconductor materials and perovskite materials.…”
Section: Introductionmentioning
confidence: 99%