InN Nanocrystals, Nanowires, and Nanotubes

Sardar, Kripasindhu; Deepak, Francis Leonard; Govindaraj, A.; Seikh, Md. Motin; Rao, C. N. R.

doi:10.1002/smll.200400011

Cited by 89 publications

(68 citation statements)

References 19 publications

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“…1-D InN nanostructures, such as nanowires and nanorods, have attracted substantial attention due to the great number of their potential applications [12][13][14]. Specifically, the narrow band gap and the existence of a surface accumulation layer, which were recently observed and debated by many research groups, extend the application area of nitride-based compound semiconductors to electrical and optical devices [15][16][17][18][19][20][21]. In InN nanostructures, the formation of surface native indium oxide and a role for it in electrical conductivity have been demonstrated by Werner et al [22].…”

Section: Introductionmentioning

confidence: 99%

Formation and microstructural characterization of In2O3 sheath layer on InN nanostructures

Ahn

Kim

et al. 2010

Chemical Physics Letters

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Section: Introductionmentioning

confidence: 99%

Formation and microstructural characterization of In2O3 sheath layer on InN nanostructures

Ahn

Kim

et al. 2010

Chemical Physics Letters

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“…Several attempts towards nanostructured metal nitrides are also found in the literature. The conversion of metal [31] and metal oxide nanoparticles [31][32][33][34] or solvothermal synthesis [35][36][37] has been shown to generate various nanometersized structures of metal nitrides with various compositions. The synthesis of metal nitrides in the pores of mpg-C 3 N 4 from the corresponding sol-gel oxide precursors represents an effective combination of the previously described nanoreactor approaches for the generation of nanostructures and the synthesis of nitrides from oxides using nitrogen sources.…”

mentioning

confidence: 99%

Growth Confined by the Nitrogen Source: Synthesis of Pure Metal Nitride Nanoparticles in Mesoporous Graphitic Carbon Nitride

2007

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The synthesis of materials in nanometer-sized confinements, or "nanoreactors", is a suitable method for the preparation of nanoparticles. As "soft" organic nanoreactors, the synthesis of nanoparticles in micelles formed from surfactants [1] and block copolymers, [2][3][4][5][6] emulsions, [7][8][9] and gels [10] has been previously described. Soft nanoreactors often allow simple purification procedures, that is, the resulting nanoparticles can be separated from the self-assembled confinement in a nondestructive fashion. On the other hand, the softness of the reactor walls sometimes leads to unpredicted forms and shapes of the resulting nanoparticles, and the method is not often applicable for desirable nanoparticle compositions, which is because of the complex reactant mixtures present during synthesis. This is especially true for metal nitrides.Other approaches have used the confinement provided by the pore system of porous solids, mainly silica or alumina. These "hard" nanoreactors or exotemplates [11] inevitably result in exactly shaped replications of nanoparticles, nanowires, or even fully replicated mesoporous frameworks, depending on the structure and pore size of the confinement. Using this approach nanoparticles of metals, [12] metal oxides, [13][14][15] sulfides, [16] and nitrides, [17] as well as carbon nanostructures [18] and nanoparticles fabricated from high-temperature engineering plastics [19] have been produced. Still, a severe disadvantage of the hard-template approach is that isolation of the wanted materials is accompanied by the destruction of the confinement, often by using harmful etching reagents such as hydrofluoric acid. Furthermore, the incorporation of precursors into the confinement has to be ensured; an adequate pore filling and, if necessary, adequate mixing and stoichiometry of the starting components inside the nanopores is hard to control and obeys the statistics of small numbers.Here we report the synthesis of metal nitride nanoparticles in a new type of nanoconfined environment, namely mesoporous graphitic carbon nitride (mpg-C 3 N 4 ).[20] This approach adds two significant improvements to reported nanostructure synthesis using exotemplates: First, the reaction-confining matrix is thermally decomposed during synthesis, making additional purification and isolation steps obsolete. Second, the medium serves as a reagent in the nanoparticle synthesis by donating an excess of nitrogen during decomposition. Appropriate metal sources in the pores of the carbon nitride are thus converted into metal nitride nanoparticles with defined nanoparticle size. Such metal nitride nanoparticles are interesting because of their potential application as abrasive materials, [21] catalysts, [22][23][24] or optoelectronic compounds. [25] Metal nitrides in general can be produced by the conversion of metals or metal oxides into the corresponding nitride using nitrogen sources, such as ammonia [26] or hydrazine [27,28] at high temperatures.Also, the use of carbon nitride as a nitrogen source was descri...

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“…Over the past 20 years, many groups have prepared the colloidal III-V nitride quantum dots by various solution-based methods. These methods can be classified into the following approaches, namely solvothermal [24,25,34], hydrothermal [35], and thermal decomposition of single [36,37] and two precursors [38]. The hydrothermal process refers to the reaction of reactants and water in a pressurized reaction environment to form nanoparticles.…”

Section: Syntheses Of Colloidal Nitride Quantum Dotsmentioning

confidence: 99%

“…Recently, high-quality crystalline InN has been grown by molecular beam epitaxy (MBE) [27]. The typically observed bandgap of high-quality wurtzite-InN grown by MBE is around 0.65-0.7 eV [34,48]. However, the quality of indium nitride samples grown by low-cost solution or other vapour methods has still remained challenging.…”

Section: Indium Nitridementioning

confidence: 99%

Colloidal III–V Nitride Quantum Dots

Chen¹,

Sun²,

Guo³

et al. 2018

Nonmagnetic and Magnetic Quantum Dots

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Colloidal quantum dots (QDs) have attracted intense attention in both fundamental studies and practical applications. To date, the size, morphology, and composition-controlled syntheses have been successfully achieved in II-VI semiconductor nanocrystals. Recently, III-nitride semiconductor quantum dots have begun to draw significant interest due to their promising applications in solid-state lighting, lasing technologies, and optoelectronic devices. The quality of nitride nanocrystals is, however, dramatically lower than that of II-VI semiconductor nanocrystals. In this review, the recent development in the synthesis techniques and properties of colloidal III-V nitride quantum dots as well as their applications are introduced.

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InN Nanocrystals, Nanowires, and Nanotubes

Cited by 89 publications

References 19 publications

Formation and microstructural characterization of In2O3 sheath layer on InN nanostructures

Formation and microstructural characterization of In2O3 sheath layer on InN nanostructures

Growth Confined by the Nitrogen Source: Synthesis of Pure Metal Nitride Nanoparticles in Mesoporous Graphitic Carbon Nitride

Colloidal III–V Nitride Quantum Dots

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