In this paper, inorganic halide perovskite cesium lead bromide (CsPbBr 3 ) films are epitaxially grown on (100)oriented SrTiO 3 substrates by pulsed laser deposition (PLD). This method has the distinctive advantages to grow high-quality films with a precise composition, designed crystalline orientation, and controlled uniform thickness. By optimizing the substrate temperatures and laser pulse numbers, (100)-CsPbBr 3 films with uniform morphology are grown on a SrTiO 3 substrate via a cubic-on-cubic epitaxial growth mode, which is proven by XRD investigation. Detailed photophysical spectroscopy study including femtosecond transient absorption spectra and detailed low-temperature photoluminescence spectra indicate that such epitaxial CsPbBr 3 films are of very low defects in the bandgap. The temperature-dependent resistivity measurement reveals that the epitaxial CsPbBr 3 films show a typical thermally activated carrier behavior with a bandgap value of 2.37 eV, which is very consistent with the optical result and indicates a quasi-intrinsic semiconductor nature of such an epitaxial film. Our results confirm that CsPbBr 3 films with high crystal quality and lower defect density can be epitaxially grown with PLD for further superlattices and quantum wells.