2021
DOI: 10.1109/jphotov.2021.3094131
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Inkjet-Printed In Situ Structured and Doped Polysilicon on Oxide Junctions

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“…This nanoscale interfacial layer presents a barrier to the charge carriers and reduces interface traps . The structure is referred to by several names, such as tunnel oxide passivated contacts (TOPCon), , polycrystalline silicon on oxide (POLO), , and poly-Si passivating contacts. At the laboratory scale, by applying this approach, efficiencies above 26% have been achieved with both-sides contacted solar cells and with an interdigitated back contact cell structure . Poly-Si passivating contacts have also already been successfully implemented in industry, reaching an efficiency of 25.4% on full-sized wafers .…”
Section: Introductionmentioning
confidence: 99%
“…This nanoscale interfacial layer presents a barrier to the charge carriers and reduces interface traps . The structure is referred to by several names, such as tunnel oxide passivated contacts (TOPCon), , polycrystalline silicon on oxide (POLO), , and poly-Si passivating contacts. At the laboratory scale, by applying this approach, efficiencies above 26% have been achieved with both-sides contacted solar cells and with an interdigitated back contact cell structure . Poly-Si passivating contacts have also already been successfully implemented in industry, reaching an efficiency of 25.4% on full-sized wafers .…”
Section: Introductionmentioning
confidence: 99%