Inkjet-Printed <i>In Situ</i> Structured and Doped Polysilicon on Oxide Junctions

Wehmeier, Nadine; Kiefer, Fabian; Brendemühl, Till; Mettner, Larissa; Wolter, Sascha J.; Haase, Felix; Peibst, Robby; Holthausen, Michael H.; Mispelkamp, Dominik; Mader, Christoph; Daeschlein, Christian; Wunnicke, Odo; Kajari‐Schröder, Sarah

doi:10.1109/jphotov.2021.3094131

Cited by 1 publication

(1 citation statement)

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“…This nanoscale interfacial layer presents a barrier to the charge carriers and reduces interface traps . The structure is referred to by several names, such as tunnel oxide passivated contacts (TOPCon), , polycrystalline silicon on oxide (POLO), , and poly-Si passivating contacts. − At the laboratory scale, by applying this approach, efficiencies above 26% have been achieved with both-sides contacted solar cells and with an interdigitated back contact cell structure . Poly-Si passivating contacts have also already been successfully implemented in industry, reaching an efficiency of 25.4% on full-sized wafers .…”

Section: Introductionmentioning

confidence: 99%

Development of Phosphorus-Doped Nanoscale Poly-Si Passivating Contacts via Inkjet Printing for Application in Silicon Solar Cells

Wang

Phang

Samundsett

et al. 2022

ACS Appl. Nano Mater.

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Herein, high-quality localized phosphorus-doped polycrystalline silicon (poly-Si) passivating contacts containing nanoscale poly-Si film (∼100 nm) on an ultrathin SiO x layer (∼1.5 nm) were fabricated via an inkjet printing technique. A detailed study of the impacts of inkjet printer settings, dopant concentration, and annealing temperature on the poly-Si passivating contact performance (represented by implied open-circuit voltage iV oc and contact resistivity ρ c ) was carried out. By applying optimized process conditions on symmetrical industrially processed intrinsic poly-Si/SiO x /ntype crystalline Si (c-Si) substrates, good surface passivation was achieved with an iV oc of 699 mV, together with a low ρ c of 6.4 mΩ•cm 2 , after annealing at 975 °C. After a hydrogenation treatment via the deposition of aluminum oxide (AlO x )/silicon nitride (SiN y ) stack and subsequent forming gas annealing (FGA), the optimum annealing temperature shifted to 950 °C and the iV oc was further improved to an excellent value of 729 mV. Optical images reveal that a line width of 75 μm can be realized on a mechanically polished silicon wafer. Moreover, high-resolution micro-photoluminescence (μ-PL) maps clearly demonstrate the localization of the doped regions on the symmetrical substrate after annealing. These results show that inkjet printing is a promising technique for the fabrication of localized poly-Si/SiO x passivating contacts in high-efficiency solar cells with high flexibility and simplicity.

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