Injection photodiode based on an n-CdS/p-CdTe heterostructure

Mirsagatov, Sh. A.; Kabulov, R. R.; Makhmudov, M. A.

doi:10.1134/s106378261306016x

Cited by 23 publications

(5 citation statements)

References 10 publications

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“…-CIGS by vacuum thermal spraying from the original source of CdS. The SnO 2 layers served as a frontal transparent conducting layer and were created by DC ion magnetron sputtering of a tin target in an argon and oxygen atmosphere [3,4]. As mentioned above, the base material for the solar cell was p-type polycrystalline CIGS films grown by the method of simultaneous thermal evaporation in vacuum from initial sources of Cu, In, Ga, and Se on the surface of molybdenum (Mo) [5].…”

Section: Methodsmentioning

confidence: 99%

Time of transition processes in a CdS-CIGS structural solar cells in the short-wave part of the absorption spectrum at different loading resistances

Kabulov¹,

Akbarov²,

Alimov³

2023

Nanosystems: Phys. Chem. Math.

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The work is devoted to the study of the influence of solar radiation in the short-wave part of the absorption spectrum at different loading resistances on the lifetime (τ ) of minority photogenerated charge carriers (∆n) of a thin-film solar cell based on Cu(In,Ga)Se 2 . It was found that with an increase in the generated photocurrent and the magnitude of the load resistance the lifetime of minority photogenerated charge carriers of a thin-film solar cell based on Cu(In,Ga)Se 2 increases. The obtained experimental results are interpreted by the charge exchange of defect states, which capture the injected and photogenerated electrons, as a result of which they cease to be active recombination centers.

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Section: Methodsmentioning

confidence: 99%

Time of transition processes in a CdS-CIGS structural solar cells in the short-wave part of the absorption spectrum at different loading resistances

Kabulov¹,

Akbarov²,

Alimov³

2023

Nanosystems: Phys. Chem. Math.

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“…Сопоставление участка обратной ветви ВАХ с зависимостью J ~ V 3.45 с выражением (3) позволяет определить следующие параметры: N R /τ i , p(0), с р /α. Для этого, также как в [8][9][10][11], составляется уравнение прямой линии для заданных экспериментальных точек. Например, составим уравнение прямой линии для двух экспериментальных точек Таблица.…”

Section: исследования темновых вах изготовленных детекторных структурunclassified

Влияние γ-облучения на механизм переноса тока в прямой ветви вольтамперной характеристики Al–p-CdTe–Mo структуры

Ачилов¹,

Кабулов²

2022

УФЖ

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Рассматривается влияние облучения γ-квантами на механизм переноса тока в структуре Al-p-CdTe-Mo с протяженной базой (w = 120 μm). Показано, что прямая ветвь ВАХ структуры Al-p-CdTe-Mo до и после облучения описывается степенной зависимостью J ~ Vβ с двумя участками: на участке D β = 1.2, a на участке F β = 3.45. Определенная из прямой ветви ВАХ величина удельного сопротивления ρ 2.1×107 Ωcm слоя p-CdTe хорошо соответствует величине удельного сопротивления исходной пленки p-CdTe. Экспериментально наблюдаемый на втором участке (F) прямой ветви ВАХ резкий рост тока также подтверждает, что фронтальный гетеропереход (n+-p-гетеропереход Al-n- Al2O3-p-CdTe) по качеству намного превосходит тыльный гетеропереход (p-n-переход p-CdTe-n-MoO3-Mo).

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“…Hence, the effort has been made, and it has succeeded in synthesizing the copper sul de thin lms on microscopic glass substrates at room temperature. The developed thin lm was subjected to analysis of its optical properties with different molar concentrations, and the optical band gap was also determined and reported [10]. The optical properties of the copper sul de thin lms make them suitable for applications in solar cells and optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

SILAR-Based Synthesis of Cd-Doped CuS Nanocrystalline Thin Films and their Photocatalytic Activity

Bhosle

Nimbalkar²,

Jare

et al. 2023

Preprint

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The Successive Ionic Layer Adsorption and Reaction (SILAR) approach was used to fabricate Cd doped CuS nanocrystalline thin films. On the optical, structural, morphological, and electronic properties of Cd doped CuS films, the influence of a 3% Cd doping concentration was investigated. The cubic phase crystal structure of the Cd doped CuS thin was revealed by XRD measurements to be polycrystalline. The bonding of the CuS semiconductor material was verified by FTIR spectra, which also displayed the emission bands of the films. The surface morphology of the produced films changes with the concentration of Cd doping, according to the FESEM data. In the UV visible spectroscopy, a blue shift in the optical band gap was identified. Under the irradiation of sunshine, the photocatalytic activity of Rhodamine B was investigated. The degradation efficiency increased nearly 97% as Cd concentration increased.

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Injection photodiode based on an n-CdS/p-CdTe heterostructure

Cited by 23 publications

References 10 publications

Time of transition processes in a CdS-CIGS structural solar cells in the short-wave part of the absorption spectrum at different loading resistances

Time of transition processes in a CdS-CIGS structural solar cells in the short-wave part of the absorption spectrum at different loading resistances

Влияние γ-облучения на механизм переноса тока в прямой ветви вольтамперной характеристики Al–p-CdTe–Mo структуры

SILAR-Based Synthesis of Cd-Doped CuS Nanocrystalline Thin Films and their Photocatalytic Activity

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