Injection-locked range and linewidth measurements at different seed-laser linewidths using a Fabry–Pérot laser-diode

Ratkoceri, Jakup; Batagelj, Boštjan

doi:10.1007/s11082-018-1676-9

Cited by 9 publications

(2 citation statements)

References 31 publications

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“…At the optimal point just below the first cascaded order threshold of 76 mA, the phonon-limited linewidth is predicted to be 10.9 times lower than at 28 mA, which yields a fundamental linewidth of 29 mHz. The linewidth of injection-locked lasers have been studied widely both theoretically and experimentally [31][32][33][34][35]. In these analyses, it is found that the locked laser will inherit the phase noise properties of the injected signal.…”

Section: Methodsmentioning

confidence: 99%

Narrow linewidth semiconductor lasers based on nonlinear self-injection locking

Bishop,

Gaeta

2023

Preprint

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Self-injection locking techniques for stabilizing lasers have been developed using passive cavities to increase the effective lifetime of the laser cavity, thereby reducing the linewidth of the laser. We propose and demonstrate a new technique based on nonlinear self-injection locking (N-SIL) which we implement via feedback from the gain-narrowed Stokes mode of a fiber Brillouin oscillator. By blue-shifting the Stokes field back to its pump frequency with an electro-optic modulator we realize recursive linewidth reduction that eliminates the phase drift caused by spontaneous emission noise. The fundamental linewidth limit is set by the spontaneous emission limit of the nonlinear oscillator, far lower than the spontaneous emission limit of a semiconductor laser. We demonstrate the power of this approach by achieving sub-hertz fundamental linewidth from the output of a commercial DFB laser and noise performance that significantly exceeds that of conventional SIL. We also and propose alternative fully-integrated designs in CMOS-compatible photonic platforms that allow for highly compact and robust implementations.

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Section: Methodsmentioning

confidence: 99%

Narrow linewidth semiconductor lasers based on nonlinear self-injection locking

Bishop,

Gaeta

2023

Preprint

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“…For decades, several techniques have been investigated and employed to stabilize resonators. Compared to electronic means of laser stabilization, optical injection locking 12 , 13 is a more compact and cost-effective alternative in which a stable narrow-linewidth emission is injected into the laser’s cavity to stabilize (‘lock’) its subsequent emissions 14 , 15 . Injection locking has been achieved and demonstrated in different forms, including the “master-slave” configuration via an external active pure seeding source 16 , the Pound–Drever–Hall technique via a stable cavity 17 , optical feedback injection (a.k.a.…”

Section: Introductionmentioning

confidence: 99%

Linewidth narrowing in self-injection-locked on-chip lasers

et al. 2023

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Stable laser emission with narrow linewidth is of critical importance in many applications, including coherent communications, LIDAR, and remote sensing. In this work, the physics underlying spectral narrowing of self-injection-locked on-chip lasers to Hz-level lasing linewidth is investigated using a composite-cavity structure. Heterogeneously integrated III–V/SiN lasers operating with quantum-dot and quantum-well active regions are analyzed with a focus on the effects of carrier quantum confinement. The intrinsic differences are associated with gain saturation and carrier-induced refractive index, which are directly connected with 0- and 2-dimensional carrier densities of states. Results from parametric studies are presented for tradeoffs involved with tailoring the linewidth, output power, and injection current for different device configurations. Though both quantum-well and quantum-dot devices show similar linewidth-narrowing capabilities, the former emits at a higher optical power in the self-injection-locked state, while the latter is more energy-efficient. Lastly, a multi-objective optimization analysis is provided to optimize the operation and design parameters. For the quantum-well laser, minimizing the number of quantum-well layers is found to decrease the threshold current without significantly reducing the output power. For the quantum-dot laser, increasing the quantum-dot layers or density in each layer increases the output power without significantly increasing the threshold current. These findings serve to guide more detailed parametric studies to produce timely results for engineering design.

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Experimental Investigation on the Side Mode Injection Locking of a Single-loop OEO under RF Signal Injection

Sarkar,

Banerjee,

Pacheco

et al. 2024

Analog Integr Circ Sig Process

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This article mainly focuses on the side mode injection locking phenomena when a single-loop optoelectronic oscillator (OEO) is under RF signal injection. The analyses are made regarding lock range, phase noise and locking time. Also, a comparative study has been prepared when the OEO is injection-locked in the first side and the main mode. We show that the lock range is smaller for injection-locked OEO in the first side mode than in the main mode. The phase noise performance of the OEO for both cases is also demonstrated. It is exhibited that the phase noise performance is better in the case of injection-locked OEO at first side mode, particularly in a strong injection regime. The transient behaviour is also approximated by measuring locking time in both cases. The lock range, phase noise and locking time dependency on optical fibre length have also been studied. Finally, we perform experiments to support our analytical findings developed earlier.

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Injection-locked range and linewidth measurements at different seed-laser linewidths using a Fabry–Pérot laser-diode

Cited by 9 publications

References 31 publications

Narrow linewidth semiconductor lasers based on nonlinear self-injection locking

Narrow linewidth semiconductor lasers based on nonlinear self-injection locking

Linewidth narrowing in self-injection-locked on-chip lasers

Experimental Investigation on the Side Mode Injection Locking of a Single-loop OEO under RF Signal Injection

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