Injection Dependence of Transient Annealing in Neutron-Irradiated Silicon Devices

Gregory, Bob; Sander, H. H.

doi:10.1109/tns.1967.4324783

Cited by 51 publications

(13 citation statements)

References 4 publications

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“…Gregory and Sander [67] found that the short-term annealing rate is very sensitive to the carrier injection level present in a device. They also found that the measured annealing factor at a given time correlates well with the electron density present in the active region of a device.…”

Section: B Short-term Annealingmentioning

confidence: 99%

“…Charge state effects, discussed above, appear to play a role in this case. If carrier lifetime in p-type silicon is monitored at a very low minority-carrier injection level (i.e., electron density), then the work of Gregory and Sander [67] suggested that very large annealing factors would be observed. Annealing factors as high as 25-50 indeed were measured later in low-injection-level experiments on such material [75], [82].…”

Section: B Short-term Annealingmentioning

confidence: 99%

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Review of displacement damage effects in silicon devices

Srour

Marshall

2003

IEEE Trans. Nucl. Sci.

618

350

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This paper provides a historical review of the literature on the effects of radiation-induced displacement damage in semiconductor materials and devices. Emphasis is placed on effects in technologically important bulk silicon and silicon devices. The primary goals are to provide a guide to displacement damage literature, to offer critical comments regarding that literature in an attempt to identify key findings, to describe how the understanding of displacement damage mechanisms and effects has evolved, and to note current trends. Selected tutorial elements are included as an aid to presenting the review information more clearly and to provide a frame of reference for the terminology used. The primary approach employed is to present information qualitatively while leaving quantitative details to the cited references. A bibliography of key displacement-damage information sources is also provided.

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Section: B Short-term Annealingmentioning

confidence: 99%

Section: B Short-term Annealingmentioning

confidence: 99%

Review of displacement damage effects in silicon devices

Srour

Marshall

2003

IEEE Trans. Nucl. Sci.

618

350

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“…1(b). We note that the annihilation of defects in silicon due to injected charge carriers has been found in the past [31][32][33] and the origin has been attributed to the enhanced mobility of defects through alternating capture and lose of electrons. [34][35][36][37][38] Among various defects, the isolated Si interstitial defects are mobile particles.…”

Section: Dependence Of the Linear Synergistic Effect On The Neutromentioning

confidence: 79%

Mechanism of Synergistic Effects of Neutron- and Gamma-Ray-Radiated PNP Bipolar Transistors

Song

Zhang

Liu

et al. 2019

ACS Appl. Electron. Mater.

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The synergistic effects of neutron and gamma ray radiated PNP transistors are systematically investigated as functions of the neutron fluence, gamma ray dose, and dose rate. We find that the damages show a 'tick'-like dependence on the gamma ray dose after the samples are radiated by neutrons. Two negative synergistic effects are derived, both of which have similar magnitudes as the ionization damage (ID) itself. The first one depends linearly on the gamma ray dose, whose slope depends quadratically on the initial displacement damage (DD) and can be attributed to the healing of neutron-radiation-induced defects in silicon. The second one has an exponential decay with the gamma ray dose, whose amplitude shows a rather strong enhanced low-dose-rate sensitivity (ELDRS) effect and can be attributed to the passivation of neutron-induced defects near the silica/silicon interface by the gamma-ray-generated protons in silica, which can penetrate the silica/silicon interface to passivate the neutron-induced defects in silicon. The simulated results based on the proposed model match the experimental data very well, but differ from previous model, which does not assume annihilation or passivation of the displacement defects. The unraveled defect annealing mechanism is important because it implies that displacement damages can be repaired by gamma ray radiation or proton diffusion, which can have important device applications in the space or other extreme environments. Unirradiated Samples Fluence: 0 n/cm 2 Fluence: 2 10 13 n/cm 2 Fluence: 3 10 13 n/cm 2 Fluence: 5 10 13 n/cm 2 LDR: 2.2mrad(Si)/s LDR: 2.2mrad(Si)/s LDR: 2.2mrad(Si)/s LDR: 2.2mrad(Si)/s HDR: 10rad(Si)/s HDR: 10rad(Si)/s HDR: 10rad(Si)/s HDR: 10rad(Si)/s Step 1:Neutron irradiation Step 2:Gamma irradiation FIG. 2. (color online) Flowchart of the neutron/gamma radiation experiments. For each of the eight radiation conditions, 2 chips with 8 PNP transistors are used.

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“…For bi po lar tran sis tors, a time-de pend ent an nealing fac tor, F(t), may be ex pressed [1,10,18]…”

Section: The Orymentioning

confidence: 99%

“…Orig i nally, the an neal ing fac tor was de fined for the vari a tions of the for ward emit ter cur rent gain in bi po lar junc tion tran sis tors [18]. In or der to pro cure re li able results, the cur rent gain has to be re corded for con stant values of the base-emit ter volt age.…”

Section: The Orymentioning

confidence: 99%

Rapid and long-term gamma-radiation annealing in low-dropout voltage regulators

Vukić

2017

NUCL TECH RAD PROT

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Sam ples of four types of low-drop out volt age reg u la tors, with both se rial pnp and npn transis tors, were ex am ined in room-tem per a ture iso ther mal gamma ra di a tion an neal ing. Af ter un in ter rupted ex po sure to a to tal ion is ing dose of 500 Gy, bi ased and loaded volt age reg u lators were ex am ined in room-tem per a ture an neal ing within the first 30 min utes af ter the expo sure. Be side the on-line mea sure ment of out put volt age and qui es cent cur rent dur ing the thirty-min ute pe riod im me di ately af ter ir ra di a tion, also re sults were pro cured af ter 10-year room-tem per a ture spon ta ne ous re cov ery. Data ob tained dur ing the ir ra di a tion and rapid anneal ing were fit ted with lin ear, ex po nen tial, and power-law re gres sion func tions. A sim ple pro ce dure was pro posed, based on the qui es cent cur rent an neal ing fac tor, for the quick es tima tion of the in te grated volt age reg u la tor's ra di a tion sen si tiv ity dur ing the post-ir ra di a tion iso ther mal an neal ing. In or der to es ti mate the cir cuit's ra di a tion sen si tiv ity, im me di ately af ter ir ra di a tion, tested de vices have to be left in the same op er at ing con di tions as dur ing the ex posure. If a clear trend of the qui es cent cur rent re cov ery can be ob served, fur ther ex am i na tions have to be im ple mented to es ti mate if a cir cuit is ac cept ably ra di a tion-tol er ant. If no re cov ery trend can be ob served within the first hour af ter ir ra di a tion, or even fur ther deg ra da tion is no ticed, then the ex am ined volt age reg u la tor is a ra di a tion-sen si tive de vice and can not be used in ra di a tion en vi ron ments. The de scribed pro ce dure is based on the mac ro scopic ef fects of the ra di a tion-in duced charge-trap ping in field ox ides and in ter faces. Key words: volt age reg u la tor, gamma ra di a tion, qui es cent cur rent, an neal ing fac tor, iso ther mal an neal ing, post-ir ra di a tion ef fect, re gres sion anal y sis V. Dj. Vuki}.: Rapid and Long-Term Gamma-Ra di a tion An neal ing in ...

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Injection Dependence of Transient Annealing in Neutron-Irradiated Silicon Devices

Cited by 51 publications

References 4 publications

Review of displacement damage effects in silicon devices

Review of displacement damage effects in silicon devices

Mechanism of Synergistic Effects of Neutron- and Gamma-Ray-Radiated PNP Bipolar Transistors

Rapid and long-term gamma-radiation annealing in low-dropout voltage regulators

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