Injection-based photodetectors

Викулин, И. М.; Kurmashev, Sh. D.; Stafeev, V. I.

doi:10.1134/s1063782608010168

Cited by 18 publications

(11 citation statements)

References 9 publications

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“…One can assume that dark current in the forward connection mode, by and large, might be due to the fact that current carriers are possibly being injected from contact points. At voltage "switched-on" mode, electrons are caught at level Ei = 0.4 eV, since their concentration at level 0.25 eV is comparatively low, and at this section the investigated photocurrent is determined by holes [9,10].…”

Section: Resultsmentioning

confidence: 99%

Photoconductivity and bandgap of binary impurity - doped crystalline silicon

Sh Mavlyanov,

Khakkulov,

Sattarov

et al. 2024

J. Phys.: Conf. Ser.

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The paper presents the results of study of the photoconductivity spectra of sulfur- and <sulfur+manganese>-doped samples of silicon (Si<S>, Si<MnS>) under dark conditions and while samples were subjected to constant light in forward and reverse switching modes. The paper also presents the calculation results of the value of the band gap (Eg ) of <sulfur+zinc> -doped silicon samples (Si<ZnS>). Spatial analogues of generally accepted GaAs structure such as Si2Mn2S and Si2Zn2S are hypothesized to be brought up in the result of above mixed dopings. Tentative investigations of the short-circuit current and open-circuit voltage of p-n-structures, as well as the photoconductivity of such structures, together with the analysis of their lux-ampere characteristic might serve for proposing potential varying band structures for solar cells.

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Section: Resultsmentioning

confidence: 99%

Photoconductivity and bandgap of binary impurity - doped crystalline silicon

Sh Mavlyanov,

Khakkulov,

Sattarov

et al. 2024

J. Phys.: Conf. Ser.

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“…A decrease in the τ value at low stresses for some samples may be explained by competing recombination channels (e.g., via shallow levels), which have been neglected in the simple model given by Eq. (1).…”

Section: Discussion Of Experimental Resultsmentioning

confidence: 99%

“…Together with mercury-cadmium-telluride compound MCT, narrow-gap InSb crystals still remain principal materials for different IR receivers and detectors (see, e.g., the review [1]). Recombination characteristics of InSb in the range of temperatures T < 300 K and under conditions of relatively low injection/generation of carriers are determined by the levels of structural defects (see [1] and references therein). In spite of a great number of experimental works, the origin and the type of these deep centres still remain unclear.…”

Section: Introductionmentioning

confidence: 99%

On the problem of type of deep recombination centres in InSb

Boiko¹,

Shepelskii²,

Stariy³

et al. 2010

Ukr. J. Phys. Opt.

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Deep levels of structural defects in InSb, which are the main centres of recombination in this material, have been studied experimentally for a long time. However, neither clear understanding of the nature of these levels nor relevant information about their binding energy has been achieved until now, while the experimental data of different works are contradictory. In this paper a theoretical model of recombination processes in InSb is built that takes into account the Auger recombination, band-to-band radiative recombination, and the recombination via deep defect levels, the intensities of which depend in different ways on the uniaxial stresses applied. A comparison of experimental stress dependences of the photoconductivity in both n-InSb and p-InSb with the predictions of our theory allows identifying the deep recombination level with an h-centre of acceptor type, with the symmetry Г 8 of the v-band top, which shifts together with the v-band edge under the uniaxial compression.

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“…Both dependencies increased linearly beyond the field intensity of 10 3 V/cm. The identical behaviors described above indicated that the bulk distribution of the fabricated structure was homogeneous over the whole range of the applied electric field [13][14][15]. If the noise current density and frequency bandwidth are taken into account, the value of the sensitivity at which the signal recorded without illumination is up to 10 -11 A/Hz 1/2 , and then the threshold sensitivity (P min ) is calculated as [16] 1 13 2 min 5 10 (W Hz )…”

Section: Resultsmentioning

confidence: 99%

Photovoltaic properties of thermally-grown selenium-doped silicon photodiodes for infrared detection applications

Hammadi

2015

Photonic Sens

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Abstract:In this work, the photovoltaic properties of selenium-doped silicon photodiodes were studied. Influence of illumination of the impurity absorption range on the current-voltage and spectral characteristics of the fabricated device were considered. The photoresponse dependencies on the electric intensity, current, and radiation power at the sample were observed. Results obtained in this work showed that the current-sensitivity of the fabricated structures at the forward bias was rather higher than that of photoresistors. The photosensitivity and detectivity were up to 2.85×10-16 W•Hz -1/2 and 2.1×10 11 cm•Hz 1/2 W -1 , respectively.

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Injection-based photodetectors

Cited by 18 publications

References 9 publications

Photoconductivity and bandgap of binary impurity - doped crystalline silicon

Photoconductivity and bandgap of binary impurity - doped crystalline silicon

On the problem of type of deep recombination centres in InSb

Photovoltaic properties of thermally-grown selenium-doped silicon photodiodes for infrared detection applications

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