Initiation of a passivated interface between hafnium oxide and In(Ga)As(  1)−(4×2)

Clemens, Jonathon B.; Bishop, Sarah R.; Lee, Joon Sung; Kummel, Andrew C.; Droopad, R.

doi:10.1063/1.3427584

Cited by 10 publications

(15 citation statements)

References 35 publications

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“…[23][24][25][26][27] The valence band offset between the dielectric and IGZO is directly measured and the conduction band offset is derived from this and the differences in bandgaps. 124,125 One of the key methods for determining valence band offsets is XPS in conjunction with techniques for obtaining bandgaps, like absorption or various types of electron energy loss spectroscopies, [126][127][128][129][130][131][132][133][134][135][136][137][138] so it is worth briefly reviewing the need for accounting for sample charging in dielectrics and curve fitting of the data. Nichols et al 134 provide a discussion of the precision of the XPS approach in determining core levels.…”

Section: X-ray Photoelectron Spectroscopy (Xps)mentioning

confidence: 99%

Energy band offsets of dielectrics on InGaZnO4

Hays

Gila

Pearton

et al. 2017

Applied Physics Reviews

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Thin-film transistors (TFTs) with channels made of hydrogenated amorphous silicon (a-Si:H) and polycrystalline silicon (poly-Si) are used extensively in the display industry. Amorphous silicon continues to dominate large-format display technology, but a-Si:H has a low electron mobility, l $ 1 cm 2 /V s. Transparent, conducting metal-oxide materials such as Indium-Gallium-Zinc Oxide (IGZO) have demonstrated electron mobilities of 10-50 cm 2 /V s and are candidates to replace a-Si:H for TFT backplane technologies. The device performance depends strongly on the type of band alignment of the gate dielectric with the semiconductor channel material and on the band offsets. The factors that determine the conduction and valence band offsets for a given material system are not well understood. Predictions based on various models have historically been unreliable and band offset values must be determined experimentally. This paper provides experimental band offset values for a number of gate dielectrics on IGZO for next generation TFTs. The relationship between band offset and interface quality, as demonstrated experimentally and by previously reported results, is also explained. The literature shows significant variations in reported band offsets and the reasons for these differences are evaluated. The biggest contributor to conduction band offsets is the variation in the bandgap of the dielectrics due to differences in measurement protocols and stoichiometry resulting from different deposition methods, chemistry, and contamination. We have investigated the influence of valence band offset values of strain, defects/vacancies, stoichiometry, chemical bonding, and contamination on IGZO/dielectric heterojunctions. These measurements provide data needed to further develop a predictive theory of band offsets. Published by AIP Publishing.

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Section: X-ray Photoelectron Spectroscopy (Xps)mentioning

confidence: 99%

Energy band offsets of dielectrics on InGaZnO4

Hays

Gila

Pearton

et al. 2017

Applied Physics Reviews

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“…Research has recently focused on In 0.53 Ga 0.47 As due to promising improvements in the In 0.53 Ga 0.47 As-high-κ interface [1][2][3][4][5], however, the issue of source-drain contacts in In 0.53 Ga 0.47 As-based MOSFETs remains. A possible solution is to find a self-aligned silicidelike material (salicide) to act as the source-drain contacts [6].…”

Section: Introductionmentioning

confidence: 99%

Ni-(In,Ga)As Alloy Formation Investigated by Hard-X-Ray Photoelectron Spectroscopy and X-Ray Absorption Spectroscopy

et al. 2014

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The electrical, chemical, and structural interactions between Ni films and In 0.53 Ga 0.47 As for source-drain applications in transistor structures have been investigated. It was found that for thick (> 10 nm) Ni films, a steady decrease in sheet resistance occurs with increasing anneal temperatures, however, this trend reverses at 450°C for 5 nm thick Ni layers, primarily due to the agglomeration or phase separation of the Ni-(In,Ga) As layer. A combined hard-x-ray photoelectron spectroscopy (HAXPES) and x-ray absorption spectroscopy (XAS) analysis of the chemical structure of the Ni-(In,Ga)As alloy system shows: (1) that Ni readily interacts with In 0.53 Ga 0.47 As upon deposition at room temperature resulting in significant interdiffusion and the formation of NiIn, NiGa, and NiAs alloys, and (2) the steady diffusion of Ga through the Ni layer with annealing, resulting in the formation of a Ga 2 O 3 film at the surface. The need for the combined application of HAXPES and XAS measurements to fully determine chemical speciation and sample structure is highlighted and this approach is used to develop a structural and chemical compositional model of the Ni-(In,Ga)As system as it evolves over a thermal annealing range of 250 to 500°C.

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“…21 The other common site found experimentally at low coverage is the bridge site. The metal atom bonds to the almost filled dangling bond of the row edge As atom, and the oxygen atoms bond to the mostly empty dangling bonds of the trough In atoms of the dimer adjacent to the row edge creating a covalent bonding configuration.…”

Section: B High-oxide Adsorption On Inas"0 0 1…-"4 ã 2…mentioning

confidence: 97%

“…The adsorption sites modeled were chosen specifically to resemble the results of an experimental STM study of HfO 2 adsorption on InAs͑0 0 1͒-͑4 ϫ 2͒ performed by Clemens et al 21 At low coverage, STM studies show that HfO 2 molecules preferentially bind in the trough, adjacent to the As row edge, in comparison to molecular adsorption on the row. The adsorption sites modeled were chosen specifically to resemble the results of an experimental STM study of HfO 2 adsorption on InAs͑0 0 1͒-͑4 ϫ 2͒ performed by Clemens et al 21 At low coverage, STM studies show that HfO 2 molecules preferentially bind in the trough, adjacent to the As row edge, in comparison to molecular adsorption on the row.…”

Section: B High-oxide Adsorption On Inas"0 0 1…-"4 ã 2…mentioning

confidence: 99%

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Theoretical analysis of initial adsorption of high-κ metal oxides on InxGa1−xAs( 1)-(4×2) surfaces

Bishop

Clemens

Chagarov

et al. 2010

The Journal of Chemical Physics

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Ordered, low coverage to monolayer, high-κ oxide adsorption on group III rich InAs(0 0 1)-(4×2) and In(0.53)Ga(0.47)As(0 0 1)-(4×2) was modeled via density functional theory (DFT). Initial adsorption of HfO(2) and ZrO(2) was found to remove dangling bonds on the clean surface. At full monolayer coverage, the oxide-semiconductor bonds restore the substrate surface atoms to a more bulklike bonding structure via covalent bonding, with the potential for an unpinned interface. DFT models of ordered HfO(2)/In(0.53)Ga(0.47)As(0 0 1)-(4×2) show it fully unpins the Fermi level.

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Initiation of a passivated interface between hafnium oxide and In(Ga)As( 1)−(4×2)

Cited by 10 publications

References 35 publications

Energy band offsets of dielectrics on InGaZnO4

Energy band offsets of dielectrics on InGaZnO4

Ni-(In,Ga)As Alloy Formation Investigated by Hard-X-Ray Photoelectron Spectroscopy and X-Ray Absorption Spectroscopy

Theoretical analysis of initial adsorption of high-κ metal oxides on InxGa1−xAs( 1)-(4×2) surfaces

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