2016
DOI: 10.1038/ncomms12839
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Initiating and imaging the coherent surface dynamics of charge carriers in real space

Abstract: The tip of a scanning tunnelling microscope is an atomic-scale source of electrons and holes. As the injected charge spreads out, it can induce adsorbed molecules to react. By comparing large-scale ‘before' and ‘after' images of an adsorbate covered surface, the spatial extent of the nonlocal manipulation is revealed. Here, we measure the nonlocal manipulation of toluene molecules on the Si(111)-7 × 7 surface at room temperature. Both the range and probability of nonlocal manipulation have a voltage dependence… Show more

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Cited by 22 publications
(73 citation statements)
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“…In recent works diffusion models for holes and electrons have been successfully applied to the nonlocal STM‐induced desorption of benzene derivates, that is, the electron induced desorption of benzene, toluene, and chlorobenzene and the hole driven desorption of toluene . Here, nonlocal means the actual desorption occurs up to several nm away from the STM‐tip.…”
Section: Introductionsupporting
confidence: 88%
“…In recent works diffusion models for holes and electrons have been successfully applied to the nonlocal STM‐induced desorption of benzene derivates, that is, the electron induced desorption of benzene, toluene, and chlorobenzene and the hole driven desorption of toluene . Here, nonlocal means the actual desorption occurs up to several nm away from the STM‐tip.…”
Section: Introductionsupporting
confidence: 88%
“…We show that the voltage threshold of +2.0 V for such STM electron induced nonlocal molecular manipulation matches the voltage threshold for STL electron induced light emission. Building on our prior nonlocal manipulation work [21][22][23] and other group's STL work [20,24], we suggest a common mechanism for these electron induced events. Namely, a fast inelastic relaxation of the injected charge to the bottom of a high-lying electronic surfaceresonance, followed by elastic diffusive transport away from the injection site and eventual inelastic decay to a lower lying surface state with possible outcomes of molecule displacement, or of light emission.…”
Section: Introductionmentioning
confidence: 55%
“…To prepare a partially toluene covered surface (∼3 molecules per unit cell) the Si(111)−7×7 surface was dosed through a computer-controlled leak valve. Automated drift tracking combined with a feature locking technique was used to ensure stability during charge carrier injection [22,23,27,28]. Typical values of the drift compensation ranged from 100 fm s −1 up to 2 pm s −1 in all three directions.…”
Section: Experimental Details Uhv Stm Systemmentioning
confidence: 99%
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“…Furthermore, one sees that A and B have about 1.0 and 0.8 eV smaller EAs than C Although these numbers are only rough estimates, they nevertheless indicate, that the charged clusters could be at least a reasonable model for localised 'hot' charge carriers with an excess energy in the range of the experimentally observed thresholds, i.e. bias voltages of 1.4 V (electrons) [29] and -1.2 V (holes) [30]. Nevertheless, the estimated energies seem to be more sensitive to the choice of the cluster and/or the quantum chemistry method than most other quantities (see below).…”
Section: Electron Affinities and Ionisation Potentialsmentioning
confidence: 96%